Metastable Si-B-C-N ceramics and their matrix composites developed by inorganic route based on mechanical alloying: Fabrication, microstructures, properties and their relevant basic scientific issues

Characterization of BCN films synthesized by radiofrequency plasma enhanced chemical vapor deposition

The structural organization of nitridic ceramics in the system Si/B/N/C on an intermediate length scale is studied using 29Si{11B} rotational echo adiabatic passage double resonance (REAPDOR) and 11B{29Si} rotational echo double resonance (REDOR) NMR spectroscopy. The experiments are performed on a 100% 29Si enriched 29Si3B3N7 ceramic material, obtained by ammonolysis and subsequent pyrolysis of the single-source precursor molecule ((trichlorosilyl)amino)dichloroborane (TADB, Cl329SiNHBCl2). Simulations of the resulting double resonance curves on the basis of multiple spin interactions are presented. The double resonance data is supported by additional 11B and 29Si static dipolar spin−echo experiments. The combined results obtained from the different experimental approaches indicate an unexpected connectivity motif in these ceramics, characterized by regions of mainly Si−N−Si linkages and islands of predominantly B−N−B connectivities.

Understanding Intermediate-Range Order in Amorphous Nitridic Ceramics: A 29Si{11B} REDOR/REAPDOR and 11B{29Si} REDOR Study

The creep behaviour of SiCN materials derived from polyvinylsilazane (PVS) and polyhydridomethylsilazane (PHMS) precursors was investigated in the temperature range between 1200 and 1550°C at compressive stresses between 30 and 250 MPa in air. Both materials show very similar creep behaviour. Decreasing strain rates with time were observed. Even after 4×10 6  s creep deformation, stationary creep was not observed. Temperature dependence of the creep behaviour of such materials is very low. Dense passivating oxide layers were found on the surface of creep specimens tested in the temperature range up to 1500°C. At 1550°C active oxidation was observed.

Compression creep behaviour of precursor-derived SiCN Ceramics

Growth and characterization of stoichiometric BCN films on highly oriented pyrolytic graphite by radiofrequency plasma enhanced chemical vapor deposition

The determination of structural units in amorphous Si–B–N–C ceramics by means of Si, B, N and C K–XANES spectroscopy

X-ray photoelectron spectroscopy (XPS) and X-ray absorption near edge structure (XANES) spectroscopy at the K-edge of Si, N, and B are presented as techniques suited to determine structural units in amorphous SiBN3C. The measurements reported give evidence for the presence of tetrahedral (SiN4)- and planar (BN3)-groups. It is concluded that these structural elements dominate the atomic surroundings of B and Si, respectively. From the spectroscopic results we conclude that C is mainly bonded to N and is not present as a pure carbide.

The determination of local structural units in amorphous SiBN3C by means of X-ray photoelectron and X-ray absorption spectroscopy

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The determination of structural units in amorphous Si–B–N–C ceramics by means of Si, B, N and C K–XANES spectroscopy

The determination of local structural units in amorphous SiBN3C by means of X-ray photoelectron and X-ray absorption spectroscopy