H. Feick
University of Hamburg
16 Papers
108 Citations
H. Feick is an academic researcher from University of Hamburg. The author has contributed to research in topics: Silicon & Semiconductor detector. The author has an hindex of 11, co-authored 16 publications.
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Papers
Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments
Eckhart Fretwurst,H. Feick,Maurice Glaser,Claus Gössling,Erik H.M. Heijne,A. Hess,F. Lemeilleur,G. Lindström,K.H. Mahlmann,A. Rolf,T. Schulz,C. Soave +11 more
TL;DR: In this paper, the reverse annealing effect after radiation damage was investigated for the change of the effective impurity concentration at room temperature and was further investigated by isochronal and isothermal studies.
Radiation studies and operational projections for silicon in the ATLAS inner detector
TL;DR: In this article, the current models for bulk damage in high resistivity silicon have been reviewed and the damage constants were obtained from a global data survey, on this basis the degradation of the silicon counters in the ATLAS Inner Detector during a 10-year LHC operation is forecasted.
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Investigation of damage-induced defects in silicon by TCT☆
TL;DR: In this paper, the free charge carrier transport for electrons, respectively, holes separately was investigated using time-resolved current transients induced by nanosecond laser pulses and measurements were performed as a function of operating temperature (100 −300 K) and bias voltage.
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Damage-induced surface effects in silicon detectors
R. Wunstorf,H. Feick,Eckhart Fretwurst,G. Lindström,G. Lutz,C. Osius,Robert Richter,T. Rohe,A. Rolf,P. Schlichthärle +9 more
TL;DR: In this article, after irradiation with low energetic electrons (20 keV), the oxide charge and density of interface states are characterized by C-V and I-V measurements and corresponding changes of the space charge region are observed with a scanning proton micro beam.
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Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons, and pions
TL;DR: In this article, the long term annealing behavior of particle detectors fabricated from high resistivity float zone silicon with initial doping concentrations ranging from 0.6 × 10 12 cm −3 (p-type) to 2.5 × 10 14 cm −2 (n-type), was studied after exposure to fast neutrons with fluences up to 8 × 10 13 cm − 2, and the energy dependence of the pion displacement damage function was investigated.
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