H. E. Smith
Air Force Research Laboratory
25 Papers
411 Citations
H. E. Smith is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Graphene & X-ray photoelectron spectroscopy. The author has an hindex of 10, co-authored 25 publications. Previous affiliations of H. E. Smith include University of Dayton Research Institute & Wright-Patterson Air Force Base.
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Papers
Studies of interfacial layers between 4H-SiC (0 0 0 1) and graphene
TL;DR: The region between epitaxial graphene and the SiC substrate has been investigated in this paper, where the interfacial layers between pristine SiC and the graphene layers were studied by X-ray photoelectron spectroscopy.
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Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Jeongho Park,William C. Mitchel,L. Grazulis,H. E. Smith,Kurt G. Eyink,John J. Boeckl,David H. Tomich,Shanee D. Pacley,John E. Hoelscher +8 more
TL;DR: A novel growth method (carbon molecular beam epitaxy (CMBE) has been developed to produce high-quality and large-area epitaxial graphene that demonstrates significantly improved controllability of the graphene growth.
115
High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier
Antonio Crespo,M.M. Bellot,Kelson D. Chabak,James K. Gillespie,Gregg H. Jessen,V. Miller,M. Trejo,Glen D. Via,D.E. Walker,B.W. Winningham,H. E. Smith,T.A. Cooper,X. Gao,Shiping Guo +13 more
TL;DR: In this article, the first CW Ka-band RF power measurements at 35 GHz from a passivated Al0.82In0.18N/GaN high-electron mobility transistor on SiC with 9.8-nm-thin barrier were reported.
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AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter‐wave applications
Shiping Guo,Xiang Gao,Daniel Gorka,Jinwoork W. Chung,Han Wang,Tomas Palacios,Antonio Crespo,James K. Gillespie,Kelson D. Chabak,M. Trejo,Virginia Miller,Mark Bellot,Glen D. Via,M. Kossler,H. E. Smith,H. E. Smith,David H. Tomich +16 more
TL;DR: In this article, the epitaxial and device results of AIInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy were presented with very low Ga background level (<1%).
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Role of extended defected SiC interface layer on the growth of epitaxial graphene on SiC
TL;DR: In this article, an extended layer of defected SiC has been observed in SiC subjected to heat treatments at 850 and 1050 °C prior to growth of graphene by thermal decomposition.
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