H. Clement
6 Papers
12 Citations
H. Clement is an academic researcher. The author has contributed to research in topics: High-electron-mobility transistor & Inverter. The author has an hindex of 3, co-authored 6 publications.
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Papers
Invited) 650 Volt GaN Commercialization Reaches Automotive Standards
Primit Parikh,Kurt Smith,Ron Barr,Ken Shono,J. McKay,Likun Shen,Rakesh K. Lal,Srabanti Chowdhury,S. Yea,Richard Peter Smith,Tsutomu Hosoda,John Gritters,L. McCarthy,R. Birkhahn,Kenji Imanishi,Brian L. Swenson,Marcia Moore,Yoshiyuki Kotani,Tsutsumo Ogino,N. Bushnell,J. Guerrero,H. Clement,Yoshimori Asai,Yifeng Wu +23 more
- 17 Aug 2017
TL;DR: In this article, the authors review the first ever Automotive (AEC Q101) Qualification for Gallium Nitride (GaN) and discuss in detail results for highly stressed robustness tests, FIT rates & lifetime testing.
20
GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges
P. Parikh,Yifeng Wu,Likun Shen,Ronald Barr,Srabanti Chowdhury,John Gritters,S. Yea,Pete Smith,L. McCarthy,R. Birkhahn,Marcia Moore,J. McKay,H. Clement,Umesh Mishra,Rakesh K. Lal,Philip Zuk,Tsutomu Hosoda,Ken Shono,Kenji Imanishi,Yoshimori Asai +19 more
- 01 Dec 2018
TL;DR: In this article, the authors highlight key successes in efficient and compact converters/inverters ranging from high performance gaming/crypto-mining power supplies, titanium class server power, servo drives, PV inverters, and automotive OBCs, dc-dc converters, pole charges.
9
650 Volt GaN: Highest Quality-Highest Performance Drives Market Ramp
P. Parikh,Y-F. Wu,L. Shen,John Gritters,T. Hosoda,Ronald Barr,Kurt Smith,K. Shono,J. McKay,H. Clement,Srabanti Chowdhury,S. Yea,P. Smith,L. McCarthy,R. Birkhahn,Philip Zuk,Y. Asai +16 more
- 01 Oct 2018
TL;DR: The design, performance and manufacturability of high voltage GaN, establishment of the highest level of quality and reliability standards and key features that led to market ramp are reviewed.
2
ed Highly Reliable GaN HEMTs on Si S
Toshihide Kikkawa,Tsutomu Hoso,Yasumori Miyazaki,Pete Smith,Lee McCarthy,Rak,Kenji Imanishi,Ken Shono,Kazuo Itabash,Kenji Kiuchi,Masahito Kanamura,Takeshi Maeda,Yoshimori Asai,Dixie Dunn,Martin J. Aguilera,J. McKay,H. Clement,Jim Honea,Umesh Mishra,Tsutomu Ogino,Kurt Smith,Douglas +21 more
- 01 Jan 2014
TL;DR: In this paper, the authors demonstrate 600 V highly high electron mobility transistors (HEMTs) o GaN on Si technologies are most impo mass-production at the Si-LSI manufacturing breakdown voltage over 1500 V was confirm dynamic on-resistance (RON) using cascode package.