In this work, we systematically studied the influence of the plasma treatment (PT) on the structural and electrical properties of Pt/rutile-TiO2/RuO2 metal–insulator–metal capacitors. The leakage current of the 12 nm thick TiO2 dielectrics prepared by atomic layer deposition was reduced below 10−7 A cm−2 while the capacitance equivalent thickness was kept below 0.5 nm using oxygen PT of the bottom RuO2 electrode. Reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy analyses allowed the conclusion that O2 plasma smoothened the RuO2 surface and increased its oxygen content through plasma induced surface reconstruction. The nucleation of TiO2 on the plasma-treated surface was faster while the thickness of the capacitor dead layer at the TiO2/RuO2 interface was reduced.

https://iopscience.iop.org/article/10.1088/0022-3727/46/38/385304/pdf

Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor

The capacitance behavior of metal insulator metal (MIM) structures with Zr1−xAlxO2 dielectrics and TiN metal electrodes is analyzed. The capacitance nonlinearity, the dielectric relaxation, and the loss phenomena are found to depend strongly on the Al content, the dielectric thickness, and the amorphous/crystalline phase of the dielectric layer. Two different kinds of phenomena—crystallization-related and interface-related, are considered to explain the observed results, especially the polarity asymmetry in the dielectric behavior. It is found that crystallization of the films enhances the effects of dielectric relaxation and loss, most likely due to charge trapping at grain boundaries. Further on, reactions between the oxidizing ambient (ozone) and the bottom electrode during high-k deposition result in structural changes (formation of TiOx interfacial layer) and thus in generation of defects which cause a different electrical behavior of the two TiN/Zr1−xAlxO2 interfaces at the top and the bottom electr...

Influence of the amorphous/crystalline phase of Zr1−xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks

Improved interface quality of atomic-layer-deposited ZrO2 metal-insulator-metal capacitors with Ru bottom electrodes

Perovskite-based BaZryTi1-yO3 (BZTO) (y=0.6) with partial crystallization has been found to possess a rather high- κ value of 48.6 and positive quadratic voltage coefficient of capacitance (VCC). Through stacking BZTO and ZrTiOx as laminate dielectric, metal-insulator-metal capacitors using VCC canceling effect advance frontiers by exhibiting a record-low VCC of 14 ppm/V2 at the capacitance of 13.4 fF/μm2, low dielectric loss tangent , and low leakage current of 7.5×10-9 A/cm2 at -1 V. With constant voltage stress at 2.5 V for 1000 s, degradation in leakage current is observed. In addition, excellent reliability of 0.89% capacitance change against stress up to a projected of 10 years is also achieved. The aforementioned characteristics not only compare favorably to other high- κ-based dielectrics, most importantly, but also these results meet ITRS requirements set by 2024.

MIM Capacitors Based on ${\rm ZrTiO}_{\rm x}/{\rm BaZr}_{\rm y}{\rm Ti}_{\rm 1-y}{\rm O}_{3}$ Featuring Record-Low VCC and Excellent Reliability

In this letter, we investigate the dependence of the performance of metal-insulator-metal (MIM) capacitors with Sm2O3 dielectric on plasma treatment (PT) performed before Sm2O3 deposition, after Sm2O3 deposition, or both before and after Sm2O3 deposition. By performing PT in N2 ambient (PTN) after Sm2O3 dielectric formation, the effective quadratic voltage coefficient of capacitance (VCC) can be reduced from 498 to 234 ppm/V2 and the effective linear VCC can be reduced from 742.3 to 172 ppm/V for MIM capacitor with Sm2O3 dielectric having a capacitance density of ~ 7.5 fF/mum2. The leakage current density at +3.3 V can be reduced from 3.44 10-7 to 1.60 times 10-8 A/cm2 by performing PTN in both before and after Sm2O3 deposition. PTN after dielectric formation is an effective way to improve the performance of high-kappa dielectric MIM capacitors for RF and analog/mixed signal IC applications.

Performance Improvement of $\hbox{Sm}_{2}\hbox{O}_{3}$ MIM Capacitors by Using Plasma Treatment After Dielectric Formation

We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 times 10-6 A/cm2 (at -1 V) at a 28 fF/ mum2 capacitance density.

https://ir.nctu.edu.tw:443/bitstream/11536/8303/1/000259812900007.pdf

Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode

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Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode