H. C. Hsueh
Tamkang University
34 Papers
164 Citations
H. C. Hsueh is an academic researcher from Tamkang University. The author has contributed to research in topics: Ab initio & XANES. The author has an hindex of 18, co-authored 31 publications. Previous affiliations of H. C. Hsueh include University of Edinburgh.
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Papers
Excitonic effects in the optical properties of a SiC sheet and nanotubes
Abstract: The quasiparticle band structure and optical properties of single-walled zigzag and armchair SiC nanotubes (SiC-NTs) as well as a single SiC sheet are investigated by ab initio many-body calculations using the GW and the GW plus Bethe-Salpeter equation approaches, respectively. Significant GW quasiparticle corrections, of more than 1.0 eV, to the Kohn-Sham band gaps from the local density approximation (LDA) calculations are found. The GW self-energy corrections transform the SiC sheet from an indirect LDA band gap to a direct band gap material. Furthermore, the quasiparticle band gaps of SiC-NTs with different chiralities behave very differently as a function of tube diameter, and this can be attributed to the difference in the curvature-induced orbital rehybridization among the different chiral nanotubes. The calculated optical absorption spectra are dominated by discrete exciton peaks due to exciton states with a high binding energy, up to 2.0 eV, in the SiC sheet and SiC-NTs. The formation of strongly bound excitons is attributed to the enhanced electron-hole interaction in these low-dimensional systems. Remarkably, the excited electron amplitude of the exciton wave function is found to peak on Si atoms near the hole position (which is on the C site) in zigzag SiC-NTs, indicating a charge transfer from an anion (hole) to its neighboring cations by photoexcitation. In contrast, this pronounced peak structure disappears in the exciton wave function in armchair SiC-NTs. Furthermore, in armchair SiC-NTs, the bound exciton wave functions are more localized and also strongly cylindrically asymmetric. The high excitation energy, $\ensuremath{\sim}$3.0 eV, of the first bright exciton, with no dark exciton below it, suggests that small-radius armchair SiC-NTs could be useful for optical devices working in the UV regime. On the other hand, zigzag SiC-NTs have many dark excitons below the first bright exciton and hence may have potential applications in tunable optoelectric devices ranging from infrared to UV frequencies by external perturbations.
Observation of the origin of d0 magnetism in ZnO nanostructures using X-ray-based microscopic and spectroscopic techniques
Shashi B. Singh,Yu Fu Wang,Y. C. Shao,Hsuan Yu Lai,S. H. Hsieh,Mukta V. Limaye,Chen Hao Chuang,H. C. Hsueh,Hsaiotsu Wang,Jau Wern Chiou,Hung Ming Tsai,Chih Wen Pao,Chia Hao Chen,Hong-Ji Lin,Jyh-Fu Lee,Chun Te Wu,Jih-Jen Wu,Way-Faung Pong,Takuji Ohigashi,Nobuhiro Kosugi,Jian Wang,Jigang Zhou,Tom Regier,Tsun-Kong Sham +23 more
TL;DR: The photoluminescence and O K-edge and Zn L3,2-edge X-ray-excited optical luminescence spectra showed that ZnO NCs contain more defects than NWs do and that in Zn O NCs, more defects are present at the O sites than at the Zn sites.
Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment.
TL;DR: The structural and vibrational properties of the prototypical layered semiconductor germanium sulfide (GeS) have been studied under pressure using a combination of high-resolution x-ray powder diffraction, Raman scattering, and ab initio simulation as mentioned in this paper.
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Origin of magnetic properties in carbon implanted ZnO nanowires.
Y. F. Wang,Y. C. Shao,S. H. Hsieh,Y. K. Chang,Ping-Hung Yeh,H. C. Hsueh,J. W. Chiou,H. T. Wang,Sekhar C. Ray,H. M. Tsai,C. W. Pao,C. H. Chen,Hung-Ju Lin,Jyh-Fu Lee,C. T. Wu,Jih-Jen Wu,Yu-Yung Chang,K. Asokan,Keun Hwa Chae,Takuji Ohigashi,Yasumasa Takagi,Toshihiko Yokoyama,Nobuhiro Kosugi,W. F. Pong +23 more
TL;DR: These findings corroborate well with the first-principles calculations of C-implanted ZnO in surface and bulk regions, which highlight the stability of implanted C for the suppression and enhancement of the ferromagnetism of theZnO-C:NW in the surface region and bulk phase, respectively.
High-pressure effects in the layered semiconductor germanium selenide
TL;DR: The calculated hydrostatic pressure dependence of the crystal structure is found to be in good agreement with the results of high-resolution x-ray structural studies, and no evidence of a pressure-induced first-order structural phase transition is found up to 130 kbar.
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