The adsorption and surface segregation behavior of elemental boron (B) deposited on Si(111) have been studied by ultraviolet photoelectron spectroscopy and accompanying reflection high-energy electron diffraction as a function of the B coverage (${c}_{B}$) and annealing temperature ($T$). Our results clearly demonstrate an effective incorporation of B into subsurface sites at $T$ g 800 K and formation of a well-ordered $(\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3})R{30}^{\ifmmode^\circ\else\textdegree\fi{}}$ surface superstructure. Thereby, a critical ${c}_{B}$ of about 0.6 monolayers (ML) was determined for different conditions to prevent surface defects resulting from Si dangling bonds, which appear as surface states at 0.4 eV below the Fermi level. Annealing of the defect-free $(\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3})R{30}^{\ifmmode^\circ\else\textdegree\fi{}}$ superstructure covered by several MLs Si at $T$ \ensuremath{\geqslant} 1040 K results in a renewal of the perfect B-induced Si surface structure, even after several deposition and annealing cycles. This indicates a dominance of B surface segregation over bulk diffusion. Significant B bulk diffusion commences only above 1100 K. Differences were found for spectra obtained for the B-induced surface structures formed after deposition and surface segregation, respectively. An additional surface state appeared at 2.1 eV below the Fermi level after deposition of 0.6 ML B. The state could be attributed to boron-boron interaction due to the presence of small clusters at the surface. This surface state did not disappear after high-$T$ annealing and was not observed for lower ${c}_{B}$ and after B surface segregation, respectively.

Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111)

Pattern effects during RTP have been extensively studied for the last 15 years, but have only recently attained focus in device production. The detection and the evaluation of pattern effects are in most cases difficult. Different coatings on the Si wafers hinder direct measurements and indirect evaluations. Production people recognize pattern effect frequently as a malfunction in temperature control. People in process integration can not easily separate the main root cause of broader parameter distribution in electrical parameters in final test due to the overlapping results of CD variations in lithography and those of the microloading effects in RTP, CMP and plasma etch processing. In this paper the authors clarify the versatile realisations of pattern effects in different geometrical fractals and for different coating materials. The authors describe new methods for easy evaluation of pattern effects in production. An inherent solution to eliminate pattern effects in dual side heated RTP is to create a (hot) black body cavity at the frontside of the production wafer. This can be achieved by positioning an additional Si wafer (called hot shield) near the frontside of the production wafer. This arrangement allows 150 K/s ramp rate and dramatically reduces intra-die variations compared to a process where a wafer is heated without the hot shield at the same ramp up rate. The enhanced thermal mass with the hot shield results in slightly longer "peak time" for spike annealing. The modelling results show that the actual longer peak time can easily be compensated by slightly reduced maximum temperature and by changed implant parameters

Pattern Effects with the Mask off...

Hydrogen interaction with Si(111)-B surfaces

Hydrogen interaction with Si(1 1 1)3x3-B surfaces

Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(1 1 1)

It is well known that boron (B) forms surface phases if deposited on Si surfaces. One interesting phase is the so called √3 × √3-R30° boron surface phase (BSP) on Si(111). This surface phase is different from all other √3 × √3-R30° surface reconstructions formed by group III atoms because B alone is able to induce this reconstruction in two different configurations. Few facts are known about the step by step formation of this √3 × √3-R30° BSP and its Si overgrowth, although this is particularly important for the incorporation of BSPs into novel electronic devices. Therefore, the formation of the surface phase by in situ scanning tunnelling microscopy (STM) has been investigated. Examination showed that deposition of B led to the breakdown of the 7 × 7 reconstruction and to the formation of a Si surface with a BSP located on T4 lattice sites (B-T4). Thermal annealing of the structure causes the B atoms to migrate from T4 to S5 positions. The two phases exhibit completely different properties as a r...

Formation and silicon overgrowth of √3 × √3-R30° boron surface phases on Si(111)

The requirement for best gate oxide integrity and oxide preparation at lowest possible thermal budget is in many cases not compatible. It has been reported that Si/SiO/sub 2/ interfacial roughness and interface width decreases with increasing growth temperature between 800/spl deg/C and 1200/spl deg/C for rapid thermal oxidation (RTO). Decreased interface width and roughness result in better device performance. Other studies have shown that high energy photons may cause a higher density of localized traps in oxide leading to an enhancement in soft breakdown occurence of ultra thin gate oxides. The aim of this study is the improvement of oxide quality by variation of process temperature and dilution of the reactive oxygen. Moreover these variations are done with a hot-shielding system.

Advantages of the hot-shielding technology with regard to ultra thin RTO quality

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Formation and silicon overgrowth of √3 × √3-R30° boron surface phases on Si(111)

Advantages of the hot-shielding technology with regard to ultra thin RTO quality