Abstract We report a breakthrough in the hardware implementation of energy-efficient all-spin synapse and neuron devices for highly scalable integrated neuromorphic circuits. Our work demonstrates the successful execution of all-spin synapse and activation function generator using domain wall-magnetic tunnel junctions. By harnessing the synergistic effects of spin-orbit torque and interfacial Dzyaloshinskii-Moriya interaction in selectively etched spin-orbit coupling layers, we achieve a programmable multi-state synaptic device with high reliability. Our first-principles calculations confirm that the reduced atomic distance between 5 d and 3 d atoms enhances Dzyaloshinskii-Moriya interaction, leading to stable domain wall pinning. Our experimental results, supported by visualizing energy landscapes and theoretical simulations, validate the proposed mechanism. Furthermore, we demonstrate a spin-neuron with a sigmoidal activation function, enabling high operation frequency up to 20 MHz and low energy consumption of 508 fJ/operation. A neuron circuit design with a compact sigmoidal cell area and low power consumption is also presented, along with corroborated experimental implementation. Our findings highlight the great potential of domain wall-magnetic tunnel junctions in the development of all-spin neuromorphic computing hardware, offering exciting possibilities for energy-efficient and scalable neural network architectures. 

pdf/domain-wall-magnetic-tunnel-junction-based-artificial-1avzycdams.pdf

Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware

Electronic and transport properties of Heusler alloy based magnetic tunneling junctions: A first principles study

Perpendicularly magnetized ferrimagnets have shown potential application in nonvolatile, high-density, and ultrafast spintronic devices. Achieving this requires tuning the material performance of ultrathin ferrimagnetic films. Here, we present an experimental demonstration of tunable perpendicular magnetic anisotropy (PMA) and spin–orbit torque (SOT) switching behavior in a ferrimagnetic Heusler alloy D022-Mn3Ga based multilayers by introducing lattice-matching underlayers. It is found that the highly (001) orientated crystalline structure is well maintained, whereas coercivity, anisotropy field, and PMA constant rely heavily on the specific underlayer. Owing to the strong out-of-plane exchange coupling, the PMA constant of Co2MnSi/D022-Mn3Ga is significantly enhanced by four times and reaches 12.1 Merg/cm3. Moreover, the SOT measurements suggest that Fe/D022-Mn3Ga and Co2MnSi/D022-Mn3Ga exhibit analog and abrupt switching dynamics, respectively. This contrasting SOT switching behavior is attributed to different magnetization switching mechanisms, verified by the direct imaging of the nanoscale magnetic domain. These results provide a deep insight into the manipulation of not only fundamental magnetic properties but also SOT switching of ferrimagnetic Heusler alloys. 

Manipulation of perpendicular magnetic anisotropy and spin–orbit torque switching behavior in ferrimagnetic D022-Mn3Ga based multilayers


 We investigated the effects of post-annealing on the magnetic properties and spin orbit torque (SOT) in CoPt/YPtBi heterostructures, where YPtBi is a topological semimetal with a large spin Hall angle. From crystal structure analysis by X-ray diffraction and transmission electron microscopy, magnetization, anomalous Hall resistance, and second harmonic Hall measurements, we found that the magnetic properties and SOT performance in CoPt/YPtBi are improved by post-growth annealing up to 300°C, while they are degraded after 350°C annealing due to intermixing and alloying. By comparative experiments using CoPt/W, we show that YPtBi is more resistive to intermixing and alloying with CoPt than W.

Effects of post-growth annealing in YPtBi topological semimetal and Co/Pt perpendicular magnetization multilayers

Spin–orbit torque magnetic random-access memory exhibits great potential for next-generation memory. Annealing is an essential process for SOT magnetic tunnel junctions (SOT-MTJs) thin films. To optimize the SOT-MTJ thin films, studying the different dimensions from micro-size to nano-size is very necessary. Here, we investigate the annealing effect on magneto-electric properties of micro-scaled and nano-scaled SOT-MTJs. The tunnel magnetoresistance (TMR) and critical current density (J c) increase after annealing, attributing to the improved crystallization of CoFeB layers and perpendicular magnetic anisotropy (PMA), respectively. However, the TMR increment of micro-scaled SOT-MTJ is larger than that in nano-scale, due to the reduced defects of micro-scaled SOT-MTJs by annealing. Additionally, the J c of nano-scaled SOT-MTJ is decoupled from that of micro-scaled SOT-MTJ because of the improved PMA and diminished thermal effect. This work assesses the different annealing effects in micro- and nano-sized dimensions and supplies experiment foundations to optimize the performance of SOT-MTJs.

Annealing effect on the magneto-electric properties of SOT-MTJs from micro to nano-sized dimensions

High thermal stability of perpendicular magnetic anisotropy in the MgO/CoFeB/W thin films

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High thermal stability of perpendicular magnetic anisotropy in the MgO/CoFeB/W thin films