Guoxin Hu
Chinese Academy of Sciences
50 Papers
272 Citations
Guoxin Hu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Gallium nitride. The author has an hindex of 12, co-authored 50 publications.
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Papers
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
Xiaoliang Wang,Guoxin Hu,Zhiyong Ma,Junxue Ran,Cuimei Wang,Hongling Xiao,Jian Tang,Jianping Li,Junxi Wang,Yiping Zeng,Jinmin Li,Zhanguo Wang +11 more
TL;DR: In this article, an AlGaN/GaN high electron mobility transistor (HEMT) was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer.
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Photovoltaic effects in InGaN structures with p–n junctions
Cuibai Yang,Xiaoliang Wang,Hongling Xiao,Junxue Ran,Cuimei Wang,Guoxin Hu,Xinhua Wang,Xiaobin Zhang,Jianping Li,Jinmin Li +9 more
TL;DR: In this article, double-crystal X-ray diffraction measurements were used to evaluate the room temperature band gaps of InGaN and n-InGaN photovoltaic structures.
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The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure
L.W. Guo,Xiaoliang Wang,Cuimei Wang,Hongling Xiao,Junxue Ran,Weijun Luo,Xiaoyan Wang,Baozhu Wang,Cebao Fang,Guoxin Hu +9 more
TL;DR: It is demonstrated that the sheet carrier concentration and the electrons mobility would be improved by the introduction of an AlN interlayer for Al" 0".
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Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD
Junxue Ran,Xiaoliang Wang,Guoxin Hu,Junxi Wang,Jianping Li,Cuimei Wang,Yiping Zeng,Jinmin Li +7 more
TL;DR: AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD to study the Mg memory effect and redistribution in the emitter-base junction and results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off.
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Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure
TL;DR: In this article, the effects of AlN interfacial layer on the electrical properties of high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures were investigated.
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