Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin–orbit coupling, conduction electron spins, and magnetization. More recently, interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this article, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, 2-D materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three- and two-terminal SOT-magnetoresistive random access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain-wall and skyrmion racetrack memories. This article aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

/pdf/roadmap-of-spin-orbit-torques-5gdnrw07hi.pdf

Roadmap of Spin–Orbit Torques

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

/pdf/roadmap-of-spin-orbit-torques-4om6gony5k.pdf

Roadmap of spin-orbit torques

Inspired by the developments in quantum computing, building quantum-inspired classical hardware to solve computationally hard problems has been receiving increasing attention. By introducing systematic sparsification techniques, we propose and demonstrate a massively parallel architecture, termed sIM or the sparse Ising Machine. Exploiting the sparsity of the resultant problem graphs, the sIM achieves ideal parallelism: the key figure of merit $-$ flips per second $-$ scales linearly with the total number of probabilistic bits (p-bit) in the system. This makes sIM up to 6 orders of magnitude faster than a CPU implementing standard Gibbs sampling. When compared to optimized implementations in TPUs and GPUs, the sIM delivers up to ~ 5 - 18x measured speedup. In benchmark combinatorial optimization problems such as integer factorization, the sIM can reliably factor semi-primes up to 32-bits, far larger than previous attempts from D-Wave and other probabilistic solvers. Strikingly, the sIM beats competition-winning SAT solvers (by up to ~ 4 - 700x in runtime to reach 95% accuracy) in solving hard instances of the 3SAT problem. A surprising observation is that even when the asynchronous sampling is made inexact with simultaneous updates using faster clocks, sIM can find the correct ground state with further speedup. The problem encoding and sparsification techniques we introduce can be readily applied to other Ising Machines (classical and quantum) and the asynchronous architecture we present can be used for scaling the demonstrated 5,000$-$10,000 p-bits to 1,000,000 or more through CMOS or emerging nanodevices.

Massively Parallel Probabilistic Computing with Sparse Ising Machines.

Efficient generation of spin–orbit torques is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin–orbit torques due to its giant spin Hall conductivity, low resistivity, high stabilities, and the ability to be compatible with CMOS circuits. However, pure clean-limit Pt with low resistivity still provides a low damping-like spin–orbit torque efficiency, which limits its practical applications. The efficiency of spin–orbit torque in Pt-based magnetic heterostructures can be improved considerably by increasing the spin Hall ratio of Pt and the spin transmissivity of the interfaces. Here we review recent advances in understanding the physics of spin current generation, interfacial spin transport, and the metrology of spin–orbit torques and summarize progress toward the goal of Pt-based spin–orbit torque memories and logic that are fast, efficient, reliable, scalable, and nonvolatile.

Maximizing spin-orbit torque generated by the spin Hall effect of Pt

The brain has effectively proven a powerful inspiration for the development of computing architectures in which processing is tightly integrated with memory, communication is event-driven, and analog computation can be performed at scale. These neuromorphic systems increasingly show an ability to improve the efficiency and speed of scientific computing and artificial intelligence applications. Herein, it is proposed that the brain's ubiquitous stochasticity represents an additional source of inspiration for expanding the reach of neuromorphic computing to probabilistic applications. To date, many efforts exploring probabilistic computing have focused primarily on one scale of the microelectronics stack, such as implementing probabilistic algorithms on deterministic hardware or developing probabilistic devices and circuits with the expectation that they will be leveraged by eventual probabilistic architectures. A co-design vision is described by which large numbers of devices, such as magnetic tunnel junctions and tunnel diodes, can be operated in a stochastic regime and incorporated into a scalable neuromorphic architecture that can impact a number of probabilistic computing applications, such as Monte Carlo simulations and Bayesian neural networks. Finally, a framework is presented to categorize increasingly advanced hardware-based probabilistic computing technologies.

https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/adma.202204569

Probabilistic Neural Computing with Stochastic Devices.

Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dimensional optimization or sampling problems. Further, random number generation is of interest in the field of cryptography. For such applications, a device's uncorrelated fluctuation time-scale can determine the effective system speed. It has been theoretically proposed that a magnetic tunnel junction designed to have only easy-plane anisotropy provides fluctuation rates determined by its easy-plane anisotropy field and can perform on a nanosecond or faster time-scale as measured by its magnetoresistance's autocorrelation in time. Here, we provide experimental evidence of nanosecond scale fluctuations in a circular-shaped easy-plane magnetic tunnel junction, consistent with finite-temperature coupled macrospin simulation results and prior theoretical expectations. We further assess the degree of stochasticity of such a signal.

Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions.

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Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions.