With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermo...

https://nars.osu.edu/sites/nars.osu.edu/files/uploads/cao-gan_review_for_radiatino_detection.pdf

Review of using gallium nitride for ionizing radiation detection

A Simple theoretical model for 63Ni betavoltaic battery

Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages, including small scale, stable output performance, long service life, high energy density, strong anti-jamming capability, and so on. Based on the theory of semiconductor physics, the current paper presented a design scheme of isotope microbattery with wide-gap semiconductor material GaN and isotope 147Pm. In consideration of the isotope’s self-absorption effect, the current paper studied and analyzed the optimization thickness of semiconductor and isotope source, junction depth, depletion region thickness, doping concentration, and the generation and collection of electron hole pairs with simulation of transport process of beta particles in semiconductor material using Monte Carlo simulation program MCNP. In the proposed design scheme, for a single decay, an average energy of 28.2 keV was deposited in the GaN, and the short circuit current density, open circuit voltage, and efficiency of a single device were 1.636 μA/cm2, 3.16 V, and 13.4%, respectively.

Optimization design of GaN betavoltaic microbattery

A radioluminescent nuclear battery using volumetric configuration: 63 Ni solution/ZnS:Cu,Al/InGaP

The field of conventional energy conversion using radioisotopes has almost exclusively focused on solid-state materials. Herein, we demonstrate that liquids can be an excellent media for effective energy conversion from radioisotopes. We also show that free radicals in liquid, which are continuously generated by beta radiation, can be utilized for electrical energy generation. Under beta radiation, surface plasmon obtained by the metallic nanoporous structures on TiO2 enhanced the radiolytic conversion via the efficient energy transfer between plasmons and free radicals. This work introduces a new route for the development of next-generation power sources.

http://large.stanford.edu/courses/2015/ph241/burkhard1/docs/srep05249.pdf

Plasmon-assisted radiolytic energy conversion in aqueous solutions

Gallium Nitride (GaN) PIN betavoltaic nuclear batteries (GB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN PIN diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 (63Ni), which emits β particles, is loaded on the GaN PIN diodes to achieve GB. Current-Voltage (I-V) characteristics shows that the GaN PIN diodes have leakage current of 18 pA at -10V due to consummate fabrication processes, and the open circuit voltage of the GB is estimated about 0.14 V and the short circuit current density is 89.2nAcm-2 . The relative limited performance of the GB is due to thick dead layer and strong backscattering of β particles, Which lead to less energy deposition in GB. However, the conversion efficiency of 1.6% and charge collection efficiency (CCE) of 100% for the GB have been obtained. Therefore, the output power of the GB are expected to greatly increase with thin dead layer and structural surface weakening the backscattering.

Gallium Nitride for Nuclear Batteries

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Gallium Nitride for Nuclear Batteries