With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermo...

https://nars.osu.edu/sites/nars.osu.edu/files/uploads/cao-gan_review_for_radiatino_detection.pdf

Review of using gallium nitride for ionizing radiation detection

III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides’ magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. © The Author(s) 2017. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0101712jss] All rights reserved.

Review—The Current and Emerging Applications of the III-Nitrides

β-Ga2O3 Schottky barrier diodes (SBDs) have been fabricated on a bulk (100) β-Ga2O3 substrate and tested as X-ray detectors in this study. The devices exhibited good rectification properties, such as a high rectification ratio and a close-to-unity ideality factor. A high photo-to-dark current ratio exceeding 800 was achieved for X-ray detection, which was mainly attributed to the low reverse leakage current in the β-Ga2O3 SBDs. Furthermore, transient response of the β-Ga2O3 X-ray detectors was investigated, and two different detection mechanisms, photovoltaic and photoconductive, were identified. The results imply the great potential of β-Ga2O3 based devices for X-ray detection.

Schottky x-ray detectors based on a bulk β-Ga2O3 substrate

X-ray Detection Performance of Vertical Schottky Photodiodes Based on a Bulk β-Ga2O3 Substrate Grown by an EFG Method

(010) EFG-grown Fe-doped β-Ga2O3 was tested as a low-noise X-ray detector with Ti/Au electrodes vertical structure. Its performance at low, high and no applied voltages was examined. The fabricated detector showed high X-ray detection performance manifested in its signal’s short fall and rise time (  103). Moreover, the X-ray-induced current signal exhibits high stability. Sub-band UV photocurrent signal showed a significantly slower response compared to X-ray-induced conductivity signal. Possible charge transport mechanisms involving ion migration are suggested and discussed. In this study, Fe doping is shown to significantly improve X-ray detection performance of Ga2O3, consolidating the applicability of Ga2O3 as a next-generation X-ray detector functioning with low power, high SNR and linearity, and significantly improved transient characteristics.

Fast X-ray detectors based on bulk β-Ga 2 O 3 (Fe)

GaN-based PIN alpha particle detectors are studied in this article. The electrical properties of detectors have been investigated, such as current–voltage ( I – V ) and capacitance–voltage ( C – V ). The reverse current of all detectors is in nA range applied at 30 V, which is suitable for detector operation. The charge collection efficiency (CCE) is measured to be approximately 80% but the energy resolution is calculated to be about 40% mostly because the intrinsic layer is not sufficiently thick enough.

GaN-based PIN alpha particle detectors

GaN-based p–i–n X-ray detectors have been fabricated. We observed using SEM that the surface of a GaN sample has a large number of hexagonal defects. The SEM results show that GaN itself contains numerous screw dislocations that will be the flow channel of leakage current, which in turn increased the reverse-bias leakage current of detectors. We have observed a two-step increase in X-ray photocurrent, which is caused by two different detection mechanisms: photovoltaic and photoconductive, and the total photocurrent ( J p ) to dark current ( J d ) ratio is about 27.7 times and the net photocurrent is about 2.52 µA at 110 V reverse bias. As the X-ray accelerating voltage increases, the photocurrent has a sublinear trend.

GaN‐based p–i–n X‐ray detection

X-ray detectors based on Fe doped GaN photoconductors have been fabricated. The dark current I(d) and photocurrent I(p) as a function of bias have been investigated and a large I(p)/I(d) ratio of 180 at 200 V has been obtained in spite of optical quenching. The physical mechanism of the transient performance of the photoconductor has been studied through fitting the experimental data. The functions of photocurrent versus acceleration voltage and current of the X-ray source have been measured and discussed.

X-ray detectors based on Fe doped GaN photoconductors

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GaN-based PIN alpha particle detectors

GaN‐based p–i–n X‐ray detection

X-ray detectors based on Fe doped GaN photoconductors