Aluminum doped ZnO thin films deposited by direct current sputtering: Structural and optical properties

The fabrication of an efficient electron transport layer (ETL) with high conductivity and transparency is of significant interest. Aluminum doped zinc oxide (AZO) is an established ETL candidate due to its excellent conductivity and transparency, especially in the visible–near infrared (Vis–NIR) spectral range. Herein, we attempt to understand AZO properties by both experimental and computational approaches, as far as these methodologies permit. As part of our approach, we have deposited AZO thin films using radio frequency sputtering technique under two different sets of conditions, batch-I (150, 175, and 200 W; 0.2 mTorr; 20 min) and batch-II (70 W; 2 mTorr; 75 min). And, we have studied the structural, morphological, topographical, electrical, and optical properties of thus deposited films. The results are complemented by first-principles calculations based on the density functional theory (DFT) performed over a 2 × 2 × 2 and 3 × 2 × 2 supercell of wurtzite ZnO, to assess the effect of one aluminum atom substitution on the structural, electronic, and optical properties of the solid. We could discuss, thus, obtained computational results by comparing with the experimental measurements through a reliable construction of aluminum doping percentage models (3.12 and 2.08 at.%).

Electrical, optical, and topographical properties of RF magnetron sputtered aluminum-doped zinc oxide (AZO) thin films complemented by first-principles calculations

Doping-induced transition from polycrystals to single crystals in ZnO thin films

Synthesis of three different ratios of Alx=0.05, 0.10, 0.15 Cox=0.05, 0.10, 0.15ZnOx=0.95, 0.90, 0.85 powders were prepared using sol gel route. Structural and electronic properties of the synthesized material were investigated using X-ray diffraction and scanning electron microscope, vibrating sample magnetometer (VSM), ultraviolet (UV) spectroscopy and dielectric studies. Characterization results reveal that the particle size is of the range 4.84 nm to the maximum size of 19.86 nm with a morphological structures representing rounded and honeycomb shapes at different doping ratios. VSM results of the prepared samples reveal the ferromagnetic nature with the hysteresis curve representation. The optical band gap has been calculated as 3.1–3.8 nm from the UV spectroscopy results. Conductivity of the samples was calculated from dielectric constant and conductivity increases with increasing doping ratios.

Synthesis and characterization of (Al, Co) co-doped ZnO for electronic applications

The present invention provides transparent semiconducting films for constructing a translucent electrode that possess a high transparency and low sheet resistance. Further, the transparent semiconducting films have a high light diffusion property, which is capable to be a translucent front/back electrode in a light-emitting device for improving the light emission efficiency and a front/intermediate/back electrode in a multi-junction solar cell for improving the light trapping effect. Related fabrication method and how they are applied in different fields are also provided in the present invention.

Direct texture transparent conductive oxide served as electrode or intermediate layer for photovoltaic and display applications

This study deals with the optimization of direct current (DC) sputtered aluminum-doped zinc oxide (AZO) thin films and their incorporation into a-Si:H/μc-Si:H tandem junction thin film solar cells aiming for high conversion efficiency. Electrical and optical properties of AZO films, i.e. mobility, carrier density, resistivity, and transmittance, were comprehensively characterized and analyzed by varying sputtering deposition conditions, including chamber pressure, substrate temperature, and sputtering power. The correlations between sputtering processes and AZO thin film properties were first investigated. Then, the AZO films were textured by diluted hydrochloric acid wet etching. Through optimization of deposition and texturing processes, AZO films yield excellent electrical and optical properties with a high transmittance above 81% over the 380–1100 nm wavelength range, low sheet resistance of 11 Ω/□ and high haze ratio of 41.3%. In preliminary experiments, the AZO films were applied to a-Si:H/μc-Si:H tandem thin film solar cells as front contact electrodes, resulting in an initial conversion efficiency of 12.5% with good current matching between subcells.

http://iopscience.iop.org/article/10.1088/1674-4926/34/6/063004/pdf

Development of aluminum-doped ZnO films for a-Si:H/μc-Si:H solar cell applications

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Development of aluminum-doped ZnO films for a-Si:H/μc-Si:H solar cell applications