Graphene and other two-dimensional materials, such as transition metal dichalcogenides, have rapidly established themselves as intriguing building blocks for optoelectronic applications, with a strong focus on various photodetection platforms The versatility of these material systems enables their application in areas including ultrafast and ultrasensitive detection of light in the ultraviolet, visible, infrared and terahertz frequency ranges These detectors can be integrated with other photonic components based on the same material, as well as with silicon photonic and electronic technologies Here, we provide an overview and evaluation of state-of-the-art photodetectors based on graphene, other two-dimensional materials, and hybrid systems based on the combination of different two-dimensional crystals or of two-dimensional crystals and other (nano)materials, such as plasmonic nanoparticles, semiconductors, quantum dots, or their integration with (silicon) waveguides

http://www-g.eng.cam.ac.uk/nms/publications/pdf/nnano.2014.215.pdf

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

/pdf/science-and-technology-roadmap-for-graphene-related-two-4q9m7czlkc.pdf

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Artificial Neural Networks have dramatically improved performance for many machine learning tasks. We demonstrate a new architecture for a fully optical neural network that enables a computational speed enhancement of at least two orders of magnitude and three orders of magnitude in power efficiency over state-of-the-art electronics.

Deep learning with coherent nanophotonic circuits

In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

Metal–Oxide RRAM

A topical review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime. Results from numerical simulations are used to discuss the temporal and spectral characteristics of the supercontinuum, and to interpret the physics of the underlying spectral broadening processes. Particular attention is given to the case of supercontinuum generation seeded by femtosecond pulses in the anomalous group velocity dispersion regime of photonic crystal fiber, where the processes of soliton fission, stimulated Raman scattering, and dispersive wave generation are reviewed in detail. The corresponding intensity and phase stability properties of the supercontinuum spectra generated under different conditions are also discussed.

Supercontinuum generation, photonic crystal fiber

Transmission measurements are performed using a low-loss zero-chirp silicon Mach-Zehnder modulator in 20-Gb/s DPSK with accumulated dispersion of -347 ps/nm to +334 ps/nm. Dispersion tolerance for 2-dB path penalty is as high as 550 ps/nm.

20-Gb/s DPSK transmission with 550-ps/nm dispersion tolerance using silicon Mach-Zehnder modulator

The present invention provides a method for straining a semiconductor wafer, the method comprising: providing a semiconductor wafer, the semiconductor wafer having a first wafer surface and a second wafer surface arranged substantially opposite the first wafer surface; providing a substrate, the substrate having a substrate surface; adhering the first wafer surface to the substrate surface, thereby connecting the semiconductor wafer to the substrate and forming a wafer substrate unit; heating the semiconductor wafer and the substrate to a first temperature; and cooling the wafer substrate unit to a second temperature lower than the first temperature; thereby straining and bending the semiconductor wafer. The present invention further provides a wafer substrate unit.

Method for straining a semiconductor wafer and a wafer substrate unit used therein

A grating coupler with aligned Si3N4 and Si grating teeth is proposed and demonstrated. The measured coupling efficiency is -1.3 dB (competitive with the best Si-only grating couplers), and the 1-dB bandwidth is a record 80 nm.

Ultra-Efficient and Broadband Dual-Level Si3N4-on-SOI Grating Coupler

This work follows the recent work on fabrication-based feasibility assessment of N-Channel Vertical Slit Field Effect Transistor (VeSFET) (1). For the first time, we demonstrate AND/OR functionality in the single device by varying the slit width. The fabricated n-channel VeSFETs with AND and OR functionalities exhibit good electrical performance with low off current of 10 -13 A and high ION/IOFF ratio of ~10 7 .

/pdf/logic-functionality-in-vertical-slit-field-effect-transistor-cekf9qlbpc.pdf

Logic Functionality in Vertical Slit Field Effect Transistor (Vesfet)

This paper demonstrates the fabrication of silicon APD array for clinical imaging applications. The fabrication process is compatible with CMOS platform. The measurement results show they are able to achieve low dark current (before breakdown) and operate linearly after breakdown (Geiger mode). Further improvement will be implemented in design and fabrication to improve the leakage current‥

Silicon avalanche photodiode array fabrication for imaging application

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