14 Papers
204 Citations
Guo Jun Ye is an academic researcher from University of Science and Technology of China. The author has contributed to research in topics: Field-effect transistor & Quantum Hall effect. The author has an hindex of 12, co-authored 13 publications.
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Papers
Black phosphorus field-effect transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
8.2K
Direct observation of the layer-dependent electronic structure in phosphorene
Likai Li,Jonghwan Kim,Chenhao Jin,Guo Jun Ye,Diana Y. Qiu,Diana Y. Qiu,Felipe H. da Jornada,Felipe H. da Jornada,Zhiwen Shi,Long Chen,Zuocheng Zhang,Fangyuan Yang,Kenji Watanabe,Takashi Taniguchi,Wencai Ren,Steven G. Louie,Steven G. Louie,Xianhui Chen,Yuanbo Zhang,Feng Wang,Feng Wang +20 more
TL;DR: It is experimentally demonstrated that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions, and the interband optical transitions cover a wide, technologically important spectral range.
798
Quantum Hall effect in black phosphorus two-dimensional electron system
Likai Li,Fangyuan Yang,Guo Jun Ye,Zuocheng Zhang,Zengwei Zhu,Wenkai Lou,Wenkai Lou,Xiaoying Zhou,Xiaoying Zhou,Liang Li,Kenji Watanabe,Takashi Taniguchi,Kai Chang,Kai Chang,Yayu Wang,Xianhui Chen,Yuanbo Zhang +16 more
TL;DR: The observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES is reported, and important information on the energetics of the spin-split Landau levels in black phosphorus is gained.
461
•Journal Article
Black Phosphorus Field-effect Transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this paper, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
181
Black phosphorus nanoelectromechanical resonators vibrating at very high frequencies.
Zenghui Wang,Hao Jia,Xu-Qian Zheng,Rui Yang,Zefang Wang,Guo Jun Ye,Xianhui Chen,Jie Shan,Philip X.-L. Feng +8 more
TL;DR: In this paper, a new type of nanoelectromechanical resonator based on black phosphorus crystals is demonstrated, which is capable of vibrating at high and very high frequencies (HF and VHF bands, up to ∼100 MHz).