[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

GaN technology is not only gaining traction in power and RF electronics but is also rapidly expanding into other application areas including digital and quantum computing electronics. This paper provides a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability. While GaN power devices have recently been commercialized in the 15–900 V classes, new GaN devices are greatly desirable to explore both higher-voltage and ultra-low-voltage power applications. Moving into the RF domain, ultra-high frequency GaN devices are being used to implement digitized power amplifier circuits, and further advances using the hardware–software co-design approach can be expected. On the horizon is the GaN CMOS technology, a key missing piece to realize the full-GaN platform with integrated digital, power, and RF electronics technologies. Although currently a challenge, high-performance p-type GaN technology will be crucial to realize high-performance GaN CMOS circuits. Due to its excellent transport characteristics and ability to generate free carriers via polarization doping, GaN is expected to be an important technology for ultra-low temperature and quantum computing electronics. Finally, given the increasing cost of hardware prototyping of new devices and circuits, the use of high-fidelity device models and data-driven modeling approaches for technology-circuit co-design are projected to be the trends of the future. In this regard, physically inspired, mathematically robust, less computationally taxing, and predictive modeling approaches are indispensable. With all these and future efforts, we envision GaN to become the next Si for electronics.

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Recent Advances in GaN‐Based Power HEMT Devices

Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture, and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability, and robustness issues facing GaN power devices. This article reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this article intends to provide power electronics’ engineers the necessary information for deploying GaN devices in the existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this article include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, and output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed.

https://ieeexplore.ieee.org/ielx7/63/4359240/10098926.pdf

Stability, Reliability, and Robustness of GaN Power Devices: A Review

A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material characteristics, including its high critical electric field, high saturation velocity, high electron mobility, and outstanding thermal stability. Therefore, the superior performance is represented by GaN-based high electron mobility transistor (HEMT) devices. They can perform at higher currents, voltages, temperatures, and frequencies, making them suitable devices for the next generation of high-efficiency power converter applications, including electric vehicles, phone chargers, renewable energy, and data centers. Thus, this review article will provide a basic overview of the various technological and scientific elements of the current GaN HEMTs technology. First, the present advancements in the GaN market and its primary application areas are briefly summarized. After that, the GaN is compared with other devices, and the GaN HEMT device’s operational material properties with different heterostructures are discussed. Then, the normally-off GaN HEMT technology with their different types are considered, especially on the recessed gate metal insulator semiconductor high electron mobility transistor (MISHEMT) and p-GaN. Hereafter, this review also discusses the reliability concerns of the GaN HEMT which are caused by trap effects like a drain, gate lag, and current collapse with numerous types of degradation. Eventually, the breakdown voltage of the GaN HEMT with some challenges has been studied.

https://www.mdpi.com/2073-4352/12/11/1581/pdf?version=1667813642

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides. Compared to the Au/Ti/p-GaN HEMTs without graphene, the insertion of graphene can increase the ION/IOFF ratios by a factor of 50, increase the VTH by 0.30 V and reduce the off-state gate leakage by 50 times. Additionally, this novel gate structure has better thermal stability. After thermal annealing at 350 °C, gate breakdown voltage holds at 12.1 V, which is first reported for Schottky gate p-GaN HEMTs. This is considered to be a result of the 0.24 eV increase in Schottky barrier height and the better quality of the Ti/graphene/p-GaN and Ti/graphene/SiNx interfaces. This approach is very effective in improving the Ion/Iff ratio and gate BV of normally-OFF GaN HEMTs.

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related breakdown. This method is an effective method to determine the breakdown mechanisms. The different BD mechanisms were further confirmed by scanning electron microscopy (SEM). Finally, the temperature dependences of the three BD mechanisms were measured and compared. This analysis method was also employed in the devices with a different passivation material and showed its applicability.

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements

Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to low-10^19 cm-3 P doping and a dislocation density of 10^8 to 10^9 cm-2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2-8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that Si-Ge interdiffusion coefficient is proportional to n^2/n_i^2 for the conditions studied, which indicates that the interdiffusion in high Ge fraction range with n-type doping is dominated by V^(2-) defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical characteristics and satisfactory reliability. Our studies show that La, a CMOS compatible metal, is promising to lower GaN HEMT S/D contact resistance. La's low work function (3.5 eV) is beneficial for reducing the barrier between the metals and GaN. The Ohmic contact formation mechanism involved was shown to be different from conventional Ti/Al films. Spherical-shaped high-La regions formed near the surface during annealing. La diffuses into the AlGaN layer, and the overlap of La and Al peaks is significantly increased compared with that before annealing.

Achieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts.

Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. The output performance of the devices was dominated by the surface passivation instead of the stress effect. However, the threshold voltage was increased by the induced stress, supporting strain engineering as an effective approach to pursue the normally-off operation of AlGaN/GaN HEMTs.

Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs

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