Gang Dong
Xidian University
27 Papers
21 Citations
Gang Dong is an academic researcher from Xidian University. The author has contributed to research in topics: Computer science & Through-silicon via. The author has an hindex of 3, co-authored 18 publications.
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Papers
An Effective Approach for Thermal Performance Analysis of 3-D Integrated Circuits With Through-Silicon Vias
TL;DR: In this paper, an equivalent anisotropic thermal model is introduced to reduce the computational time resulting from complicated numerical integration, and the maximum deviation is less than 5%, indicating the accuracy of the proposed model.
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Thermal-Aware Modeling and Analysis for a Power Distribution Network Including Through-Silicon-Vias in 3-D ICs
TL;DR: By combining the equivalent thermal conductivity and the proposed complete thermal models for a 3-D PDN, a fast temperature analysis procedure can be expediently applied using the finite volume method.
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MTL-based modeling and analysis of the effects of TSV noise coupling on the power delivery network in 3D ICs
TL;DR: An analytical model based on the theory of multiconductor transmission lines (MTLs), which can accurately and quickly estimate the noise coupling coefficient among a large number of TSVs and offers good practicability for similar structures and even the TSVs of complex structures is presented.
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Analysis and optimization of coupling noise in TSV array
Zheng Mei,Gang Dong,Weijun Zhu,Jingrui Chai,Junping Zheng,Dongliang Song +5 more
- 01 Aug 2018
TL;DR: In this article, the authors proposed a twisted chain structure based on the differential interleaved layout for the multi-layer substrate stacked, which can reduce the coupling noise by up to 25% without increasing the silicon substrate area.
9
Universal closed-form expression based on magnetic flux density for the inductance of Tapered Through-Silicon Vias (T-TSVs)
TL;DR: A universal closed-form expression for the parasitic inductance of tapered through-silicon vias (T-TSVs) with a frequency of up to 20GHz is proposed, which considers skin and proximity effects and can be used to calculate the self-partial inductance and mutual-partial induction, considering TSVs located in adjacent layers or in the same layer.
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