Gang Chen
OmniVision Technologies
69 Papers
549 Citations
Gang Chen is an academic researcher from OmniVision Technologies. The author has contributed to research in topics: Pixel & Layer (electronics). The author has an hindex of 16, co-authored 69 publications. Previous affiliations of Gang Chen include National University of Singapore & Chartered Semiconductor Manufacturing.
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Papers
Dynamic NBTI of PMOS transistors and its impact on device lifetime
Gang Chen,K.Y. Chuah,Meng Li,D.S.H. Chan,Chew Hoe Ang,Jia Zhen Zheng,Yunye Jin,Dim-Lee Kwong +7 more
- 13 May 2003
TL;DR: In this article, the authors demonstrate that the interface traps generated under NBTI stressing in a p-MOSFET are subsequently passivated when the gate to drain voltage switches to positive (corresponding to the low output state of the inverter).
206
Surface nanostructuring by femtosecond laser irradiation through near-field scanning optical microscopy
Yuan Lin,Yuan Lin,Minghui Hong,Minghui Hong,WJ Wang,Zengbo Wang,Gang Chen,Q Xie,LS Tan,TC Chong,TC Chong +10 more
TL;DR: In this paper, the effect of probe-to-sample distance on dot-pattern features is studied, and different dot pattern shapes are generated: dumbbell-dot, ellipsoid-dot and circle-dot.
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Studies of carbon nitride thin films synthesized by KrF excimer laser ablation of graphite in a nitrogen atmosphere
Yongfeng Lu,Z. M. Ren,W. D. Song,Daniel Siu-Hung Chan,T. S. Low,K. Gamani,Gang Chen,Kebin Li +7 more
TL;DR: In this paper, carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in a nitrogen atmosphere.
34
Patent
Image sensor pixel cell with switched deep trench isolation structure
Sing-Chung Hu,Rongsheng Yang,Gang Chen,Howard E. Rhodes,Sohei Manabe,Dyson H. Tai +5 more
- 15 Aug 2013
TL;DR: In this paper, a pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material, and a floating diffusion is disposed in a well region disposed in the epitaxis layer in the first region.
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Patent
Test structure for automatic dynamic negative-bias temperature instability testing
Chew Hoe Ang,Gang Chen,Shyue Seng Tan +2 more
- 10 Jun 2004
TL;DR: In this article, the authors describe a test structure and process to create the structure for performing automatic dynamic stress testing of PMOS devices for Negative Bias Temperature Instability (NB TI), which consists of an integrated inverter, two integrated electronic switches for switching from stress mode to device DC characterization measurement mode, and a PMOS FET device under test.
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