FIELD: chemistry.SUBSTANCE: when implementing the method, a sealed growth chamber with a solution-melt is used, in which a group of substrates are fixed in pairs. In this case, a stationary growth chamber is used with a variable width of the growth channel in height with a certain deviation angle from the vertical ϕ.EFFECT: compensation of undesirable mass transfer of the primary crystal-forming component - arsenic in the vertical direction, which leads to the increased uniformity of the thickness of the epitaxial layers on the structure area and, accordingly, the main technical or electrical characteristics of the resulting epitaxial structures.2 cl, 2 dwg, 2 ex, 2 tbl

Method of producing semiconductor structures by liquid phase epitaxy with high uniformity on thickness of epitaxial layers

Device for liquid-phase epitaxy

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Device for liquid-phase epitaxy