G. Sai Saravanan
Solid State Physics Laboratory
23 Papers
33 Citations
G. Sai Saravanan is an academic researcher from Solid State Physics Laboratory. The author has contributed to research in topics: Ohmic contact & High-electron-mobility transistor. The author has an hindex of 5, co-authored 21 publications.
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Papers
Ohmic contacts to pseudomorphic HEMTs with low contact resistance due to enhanced Ge penetration through AlGaAs layers
G. Sai Saravanan,K. Mahadeva Bhat,K. Muraleedharan,H. P. Vyas,Rangarajan Muralidharan,Anand P. Pathak +5 more
TL;DR: In this article, the authors have performed alloying experiments in the temperature range of 390 −450 °C, and the contact resistance was determined using transfer length method measurements, and they have observed that doping of the channel by germanium is possible even at lower temperatures.
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Synthesis of Ge nanocrystals by atom beam sputtering and subsequent rapid thermal annealing
N. Srinivasa Rao,Anand P. Pathak,N. Sathish,G. Devaraju,V. Saikiran,Pawan K. Kulriya,D. C. Agarwal,G. Sai Saravanan,D.K. Avasthi +8 more
TL;DR: In this article, the atom beam co-sputtering (ABS) method was used for the preparation of Ge nanocrystals embedded in an SiO2 matrix by using X-ray diffraction (XRD) and Raman spectroscopy.
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Electromagnetic Simulation and Characterization a Metal Ceramic Package for Packaging of High Isolation Switches
TL;DR: In this article, the SPDT MMIC performance degradation was arrested by improvement in the package structure and it showed insertion loss of i1.6dB and input/output (I/O) return losses of 16dB in the new package as compared to the values of i2.1dB and i12dB I/O return losses in the original package.
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MESFET process based planar schottky diode and its application to passive power limiters
Sandeep Chaturvedi,G. Sai Saravanan,K. Mahadeva Bhat,Sangam Bhalke +3 more
- 01 Dec 2013
TL;DR: A planar Schottky diode which is process compatible with general planar MESFET process is described in this article, where the device geometry has been designed and optimized keeping in view the applications up to Ku-band.
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Evolution of surface morphology of alloyed AuGe/Ni/Au ohmic contacts to GaAs microwave FETs
G. Sai Saravanan,K. Mahadeva Bhat,S. Dhamodaran,Anand P. Pathak,Rangarajan Muralidharan,H. P. Vyas,D.V. Sridhara Rao,R. Balamuralikrishnan,K. Muraleedharan +8 more
TL;DR: In this article, a model involving the phenomena of coalescence and outdiffusion occurring simultaneously was proposed to explain the evolution of surface morphology of the contact surface of an AuGe/Ni/Au ohmic contact.
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