Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm–2, a room-temperature output power exceeding 105 mW and operation up to 120 °C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm−2 in the III–V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic–electronic integration.

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Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Growing a group III–V quantum dot laser directly on a group IV substrate could provide silicon photonics with a convenient new form of laser source for use in optoelectronic circuitry.

Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

Solid-state lighting has made tremendous progress this past decade, with the potential to make much more progress over the coming decade. In this article, the current status of solid-state lighting relative to its ultimate potential to be “smart” and ultra-efficient is reviewed. Smart, ultra-efficient solid-state lighting would enable both very high “effective” efficiencies and potentially large increases in human performance. To achieve ultra-efficiency, phosphors must give way to multi-color semiconductor electroluminescence: some of the technological challenges associated with such electroluminescence at the semiconductor level are reviewed. To achieve smartness, additional characteristics such as control of light flux and spectra in time and space will be important: some of the technological challenges associated with achieving these characteristics at the lamp level are also reviewed. It is important to emphasise that smart and ultra-efficient are not either/or, and few compromises need to be made between them. The ultimate route to ultra-efficiency brings with it the potential for smartness, the ultimate route to smartness brings with it the potential for ultra-efficiency, and the long-term ultimate route to both might well be color-mixed RYGB lasers.

Toward Smart and Ultra-Efficient Solid-State Lighting

Thanks to advanced semiconductor microfabrication technology, chip-scale integration and miniaturization of lab-on-a-chip components, silicon-based optical biosensors have made significant progress for the purpose of point-of-care diagnosis In this review, we provide an overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors Their sensing mechanisms and sensor performances, as well as real biomarkers for label-free detection, are exhibited and compared We also review the development of chip-level integration for lab-on-a-chip photonic sensing platforms, which consist of the optical sensing device, flow delivery system, optical input and readout equipment At last, some advanced system-level complementary metal-oxide semiconductor (CMOS) chip packaging examples are presented, indicating the commercialization potential for the low cost, high yield, portable biosensing platform leveraging CMOS processes

Silicon Photonic Biosensors Using Label-Free Detection.

We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 μm has been demonstrated with threshold current density of 725 A/cm2 and output power of ~26 mW for broad-area lasers with as-cleaved facets at room temperature. These results are directly attributable to the optimized growth temperature of the initial GaAs nucleation layer.

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.

Data are presented demonstrating that a low-threshold quantum dot laser diode can achieve very low internal optical loss. The broad-area laser diode operates at the wavelength 1.22 m and delivers 2 W of power from a 1.6 cm-long cavity with uncoated facets, with a lasing threshold current density of 10.4 A/cm 2 . The laser diode's internal waveguide loss is extracted from cavity length measurements to be ~0.25cm -1 . The interdependence of threshold current density and internal optical loss is discussed.

Quantum dot laser diode with low threshold and low internal loss

Data are presented showing that a quantum-dot laser diode can achieve a continuous-wave room-temperature threshold current density as low as 11.7 A/cm 2 . The broad-area laser diode operates at a wavelength of 1.22 mum and delivers a power level of 0.42 W with 40% maximum slope efficiency in p-up mounting without heatsinking. Spectral measurements indicate the onset of stimulated emission at ~6 A/cm 2 .

Very-low-threshold current density continuous-wave quantum-dot laser diode

A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous broadening and p-doping influence the QD laser's temperature dependence of threshold T 0 The analysis includes the additional parameters of homogeneous broadening, quantum state populations, and threshold gain The results show that while the source of negative T 0 can occur due to different effects, the transparency current plays a critical role in both undoped and p-doped QD lasers Experimental trends of negative T 0 and their dependence on p-doping are replicated in the calculated results Inhomogeneous broadening is found to play a lesser role to the transparency current in setting T 0 Homogeneous broadening is most important for uniform QDs with thermally isolated ground-state transitions

Threshold Temperature Dependence of a Quantum-Dot Laser Diode With and Without p-Doping

Low threshold QD laser with threshold current density ≪10 A/cm2 is experimentally shown and threshold current temperature dependence of a QD laser with an ideal delta function density of electronic states is analyzed.

Threshold and temperature dependence of quantum dot laser diodes approaching ideal performance

The physics of quantum dot lasers are studied theoretically and experimentally to study their threshold temperature dependence, and the relationship between internal loss and threshold current density.

Physics of quantum dot lasers: Threshold temperature dependence, internal loss effects, and threshold current density

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