G. Narcy
University of Montpellier
9 Papers
108 Citations
G. Narcy is an academic researcher from University of Montpellier. The author has contributed to research in topics: Laser & Quantum well. The author has an hindex of 7, co-authored 9 publications. Previous affiliations of G. Narcy include Centre national de la recherche scientifique.
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Papers
Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 μm wavelength range around room temperature
L. Naehle,Sofiane Belahsene,M. von Edlinger,M. Fischer,Guilhem Boissier,Pierre Grech,G. Narcy,Aurore Vicet,Yves Rouillard,J. Koeth,L. Worschech +10 more
TL;DR: In this paper, a distributed feedback (DFB) laser diodes based on the concept of lateral metal gratings fabricated on type-I quantum well GaInAsSb/AlGaInSb material are presented.
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GaSbBi/GaSb quantum well laser diodes
O. Delorme,O. Delorme,Laurent Cerutti,Laurent Cerutti,Esperanza Luna,G. Narcy,G. Narcy,Achim Trampert,Eric Tournié,Eric Tournié,Jean-Baptiste Rodriguez,Jean-Baptiste Rodriguez +11 more
TL;DR: In this paper, structural and optical properties of GaSbBi single layers and GaSBBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GAsb substrates are reported.
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Laser Diodes for Gas Sensing Emitting at 3.06 $\mu$ m at Room Temperature
Sofiane Belahsene,Lars Naehle,Marc Fischer,Johannes Koeth,Guilhem Boissier,Pierre Grech,G. Narcy,Aurore Vicet,Yves Rouillard +8 more
TL;DR: In this paper, a type-I quantum-well laser diodes with an active region constituted of GaInAsSb-AlGaInSb are reported, with a threshold current density of 255 A/cm2 at room temperature.
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InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 μm at room-temperature
TL;DR: In this article, laser diodes based on 4ML InAs/3ML GaSb/1ML InSBS/3 ML GaSB/3 LM GaSBS short-period superlattices (SPSLs) for emission in the 3-35 mum wavelength range were investigated.
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Monolithic tunable GaSb-based lasers at 3.3 [micro sign]m
L. Naehle,Christian Zimmermann,Sofiane Belahsene,M. Fischer,Guilhem Boissier,Pierre Grech,G. Narcy,Stefan Lundqvist,Yves Rouillard,Johannes Koeth,Martin Kamp,L. Worschech +11 more
TL;DR: In this paper, a wide-tunable monolithic two-section laser emitting at around 3.3 µm has been developed, which is based on GaInAsSb quantum wells with quinary AlGaInSb barrier layers.
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