G. M. Yang
Chonbuk National University
18 Papers
229 Citations
G. M. Yang is an academic researcher from Chonbuk National University. The author has contributed to research in topics: Etching (microfabrication) & Metalorganic vapour phase epitaxy. The author has an hindex of 8, co-authored 18 publications.
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Papers
Lateral wet oxidation of AlxGa1−xAs‐GaAs depending on its structures
TL;DR: In this paper, the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions, and the oxidation length decreases with decreasing AlAs thickness in the range of <80 nm and oxidation nearly stops at a thickness of ∼11 nm.
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GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al2O3 powder
T. K. Kim,S. H. Kim,Sang Sik Yang,J. K. Son,Kyu Hyoung Lee,Y. G. Hong,K. H. Shim,Jeon-Wook Yang,Kee Young Lim,S. J. Bae,G. M. Yang +10 more
TL;DR: In this paper, a surface-textured InGaN/GaN light-emitting diodes (LEDs) were fabricated by natural lithography combined with inductively coupled plasma etching.
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Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition
TL;DR: In this article, the authors found that pit formation strongly depends on the indium and aluminum compositions in InxGa1-xN and AlxGa 1xN layers, respectively, and that the origin of pits is changed from the vertex of threading dislocations to the stacking mismatch boundaries induced by stacking faults and the three-dimensional island growth at the initial stage.
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Superlattice-like stacking fault and phase separation of InxGa1−xN grown on sapphire substrate by metalorganic chemical vapor deposition
TL;DR: In this paper, a superlattice-like stacking fault in the InxGa1−xN grown on sapphire substrate was detected by the selected area diffraction pattern and high-resolution transmission electron microscopy.
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GaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate
TL;DR: In this paper, a GaN microcavity structure with SiO2∕ZrO2 dielectric distributed Bragg reflectors was fabricated by means of transferring an InGaN∕GaN multiple quantum well (QW) structure from the (111) Si substrate onto a sapphire carrier and wet-chemical etching of the substrate.
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