G. Lindstroem
University of Hamburg
22 Papers
168 Citations
G. Lindstroem is an academic researcher from University of Hamburg. The author has contributed to research in topics: Silicon & Crystallographic defect. The author has an hindex of 12, co-authored 22 publications.
Chat about Author
Papers
Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors
TL;DR: In this paper, a detailed relation between the microscopic reasons based on defect analysis and their macroscopic consequences for the degradation of silicon detector performance is presented, and it is shown that the changes in the Si device properties (depletion voltage and leakage current) after exposure to high levels of 60 Co-γ doses can be completely understood by the microscopically investigated formation of two point defects, a deep acceptor and a shallow donor, both depending strongly on the oxygen concentration in the silicon bulk.
118
Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy
TL;DR: In this article, the authors focus on the electrical performance of silicon diodes impaired by radiation induced active defects and show an increase of the introduction rates of both point defects and small clusters with increasing energy.
79
Radiation induced point- and cluster - related defects with strong impact to damage properties of silicon detectors
Ioana Pintilie,Eckhart Fretwurst,Alexandra Junkes,G. Lindstroem +3 more
- 01 Oct 2008
TL;DR: In this article, a detailed relation between the microscopic reasons as based on defect analysis and their macroscopic consequences for detector performance is presented, in particular, the changes in the Si device properties (depletion voltage and leakage current) after exposing to high levels of Co60- γ irradiation can be completely understood by the microscopically investigated formation of two point defects: i) a defect formed via a second order process (I p ) that can be associated with the long searched for V 2 O complex or with a Carbon related center and is the cause
64
A new method of carrier trapping time measurement
TL;DR: In this paper, a new method of measuring carrier trapping time by a simple analysis of the current pulse shape is proposed and demonstrated for irradiated silicon detectors, which is called Exponentiated Charge Crossing (ECC).
40
Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
Jaakko Härkönen,Esa Tuovinen,Panja-Riina Luukka,Eija Tuominen,Kati Lassila-Perini,P. Mehtälä,S. Nummela,J. Nysten,A. Zibellini,Z. Li,Eckhart Fretwurst,G. Lindstroem,J. Stahl,F. Hönniger,V. K. Eremin,Alexander Ivanov,E. M. Verbitskaya,P. Heikkila,Victor Ovchinnikov,Marko Yli-Koski,P. Laitinen,A. Pirojenko,I. Riihimäki,Ari Virtanen +23 more
TL;DR: In this paper, the authors processed pin-diodes on Czochralski silicon (Cz-Si), standard float zone silicon (FzSi), and oxygenated Fz-si.
32