G. I. Britvich
National University of Science and Technology
4 Papers
3 Citations
G. I. Britvich is an academic researcher from National University of Science and Technology. The author has contributed to research in topics: Neutron detection & Ohmic contact. The author has an hindex of 1, co-authored 4 publications. Previous affiliations of G. I. Britvich include Kurchatov Institute.
Chat about Author
Papers
Fast-Neutron Detectors Based on Surface-Barrier GaAs Sensors with an Ultrahigh-Molecular-Weight Polyethylene Converter
S. V. Chernykh,A. V. Chernykh,G. I. Britvich,G. I. Britvich,A. P. Chubenko,A. P. Chubenko,N. Burtebayev,D. M. Zazulin,J. Mussayev,R. Khodzhaev,V. V. Tcherdyntsev,F. S. Senatov,S. I. Didenko +12 more
TL;DR: In this paper, surface-barrier structures based on high-purity epitaxial GaAs layers with an ultrahigh-molecular-weight polyethylene converter were tested as fast-neutron detectors.
2
Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers
F.M. Baryshnikov,G. I. Britvich,A. V. Chernykh,S. V. Chernykh,A. Р. Chubenko,S. I. Didenko,G. I. Koltsov +6 more
- 07 Nov 2012
TL;DR: Samples of nuclear detectors which represent matrices of p-i-n diodes were fabricated based on undoped gallium arsenide epitaxial layers by ion implantation technology as mentioned in this paper.
1
Direct Fast-Neutron Detection with Diamond Homoepitaxial Me–p––p+ Structures
S. V. Chernykh,S. A. Tarelkin,A. V. Chernykh,S. Yu. Troschiev,Nikolay V. Luparev,N. V. Kornilov,D. V. Teteruk,S.A. Terentiev,Vladimir Blank,A. P. Chubenko,A. P. Chubenko,G. I. Britvich,G. I. Britvich,M. Yu. Kostin,N. I. Polushin,S. I. Didenko +15 more
TL;DR: The results of studies on fast-neutron detectors application of homoepitaxial Me-p––p+ structures are reported in this paper, where the Schottky contact on epitaxial layer with 17 mm2 area was fabricated by 30 nm Pt deposition and the Ti(30 nm)/Pt(30nm)/Au(50 nm) metallization scheme was used as an ohmic contact on the backside of the p+ HPHT diamond plate.
Comparative Characteristics of GaAs Detectors and Silicon Pixel Detectors with Internal Amplification
Gennady I. Koltsov,V. N. Murashev,A. P. Chubenko,R. A. Mukhamedshin,G. I. Britvich,A. V. Chernykh,S. V. Chernykh +6 more
TL;DR: In this paper, a comparison of GaAs semiconductor radiation detectors and silicon pixel ones with internal amplification elaborated for detection of nuclear radiation is carried out, where both the detector types have high sensitivity to α, β and γ radiation and can be applied in space and accelerator experiments for energy determination of elementary particles as well as in astrophysics, transmission and reflecting electron microscopy, medicine, biology and so on.