We present an extended drift-diffusion modelling to study electron transport in semi-insulating n-GaAs Schottky-barrier diodes The model accounts for hot-carrier dynamics and associated kinetics of electrical active traps A field-enhanced capture cross-section of the two deepest electron traps, attributed to EL2 and EL3 centres, is found to determine the main characteristics of this device A detailed description of the profile of the electric field, free charge and other related quantities is provided The modelling compares well with available experimental results and confirms the suitability of this device to be used as a detector for nuclear radiation

An extended drift-diffusion model of semi-insulating n-GaAs Schottky-barrier diodes

Semi-insulating SI GaAs samples from a zone refined crystal were irradiated with high energy protons (24 GeV/c, fluences up to 1.64×1014 p/cm2). Optical spectra in transmittance and reflectance were accurately measured in the energy range of 0.6–1.4 eV to determine, through the absorption coefficient, the concentrations of both neutral and ionized EL2 defects as a function of the proton fluence. Both these concentrations have been shown to increase linearly with the proton fluence; this behavior well explains the remarkable decrease of the charge collection efficiency observed in proton irradiated GaAs detectors at doses associated with high luminosity beams at a new particle collider accelerator (e.g., the LHC at the CERN laboratory).

Optical evaluation of the ionized EL2 fraction in proton (24 GeV) irradiated semi-insulating GaAs

Thermally-stimulated current (TSC) measurements and a detailed analysis of current-voltage (I-V) characteristics have been made on semi-insulating GaAs (SI-GaAs) Schottky diode particle detectors, fabricated on substrates from several suppliers, before and after irradiation with 24 GeV protons and 300 MeV pions. The analysis of I-V characteristics allows the determination of the barrier height and bulk resistance in detectors. Changes observed in I-V characteristics and TSC spectra after irradiation are described and a dislocation-net model of radiation-damaged devices is proposed.

Micro-inhomogeneity effects and radiation damage in semi-insulating GaAs radiation detectors

To clarify the proton energy dependence of proton irradiation damage in GaAs materials, intrinsic and Si-doped GaAs were irradiated with 100 keV and 2 MeV protons at different fluences. The evolution of lattice defects and optical properties of GaAs were analyzed by Raman spectroscopy, x-ray diffraction (XRD) spectroscopy, and photoluminescence (PL) spectroscopy. The results of Raman and XRD results show that the structures of the intrinsic GaAs and Si-doped GaAs does not change much after proton irradiation, which exhibits excellent radiation resistance. At the same time, the Raman results also prove that the radiation resistance of structural stability of Si-doped GaAs is lower than that of the intrinsic GaAs. However, in contrast to the structural properties, the optical properties of intrinsic GaAs degrade severely after irradiation in the PL spectrum, indicating that the optical properties of Si-doped GaAs are more stable than intrinsic GaAs. This is due to the changes of the light-emitting mechanism for Si-doped GaAs. In addition, the Raman and PL results also confirm that the damage produced by protons at 100 keV is greater than 2 MeV, which is consistent with the SRIM simulation.

Structural and optical changes in GaAs irradiated with 100 keV and 2 MeV protons

Semi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different doses. The irradiation-induced deep level defects have been investigated by current transient spectroscopy to find their energy, capture cross sections and generation rate.Two electron traps at Ec+0.14eV(E13) and Ec-0.70eV(E4) and a hole trap at Ec-0.14eV(H2) in addition to the levels existing before the irradiation have been detected in the irradiated samples. These findings have been related to the performance of gallium arsenide charge particle detectors.

Defects Induced by Protons and γ-Rays in Semi-Insulating Gaas Detectors

Observations have been made of the behaviour of high resistivity silicon and semi-insulating gallium arsenide ionizing radiation detectors after exposure of up to 30 Mrad 60 Co photons. Results are presented on leakage current and deep level defects of the substrate material of photon damage devices. These findings have been related to the charge collection efficiency of the detectors.

Photon radiation damage in high purity silicon and lec si gallium arsenide detectors

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Defects Induced by Protons and γ-Rays in Semi-Insulating Gaas Detectors

Photon radiation damage in high purity silicon and lec si gallium arsenide detectors