G. Devaraju
University of Hyderabad
26 Papers
62 Citations
G. Devaraju is an academic researcher from University of Hyderabad. The author has contributed to research in topics: Irradiation & Swift heavy ion. The author has an hindex of 7, co-authored 26 publications. Previous affiliations of G. Devaraju include University of Padua & Rajiv Gandhi University of Knowledge Technologies.
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Papers
Effects of swift heavy ion irradiation on band gap of strained AlGaN/GaN Multi Quantum Wells
G. Devaraju,N. Sathish,Anand P. Pathak,Andrzej Turos,Marco Bazzan,Enrico Trave,Paolo Mazzoldi,Brij M. Arora +7 more
TL;DR: In this paper, a strain-layer super lattice of AlGaN/GaN Multi Quantum Well (MQW) was grown on sapphire with insertion of AlN and GaN as buffer layers between substrate and epi-layer by MOCVD.
17
Formation of Ge nanocrystals from ion-irradiated GeO2 nanocrystals by swift Ni ion beam
TL;DR: In this paper, the formation of GeO 2 nanocrystal (NC) thin films was analyzed using field emission scanning electron microscopy (FESEM) to study the morphology and modifications in NCs due to ion irradiation.
17
Ion beam studies of Hafnium based alternate high-k dielectric films deposited on silicon
N. Manikanthababu,T. K. Chan,Anand P. Pathak,G. Devaraju,G. Devaraju,N. Srinivasa Rao,N. Srinivasa Rao,Ping Yang,Mark B. H. Breese,Thomas Osipowicz,S. V. S. Nageswara Rao +10 more
TL;DR: In this paper, the authors have performed High Resolution Rutherford Backscattering Spectrometry (HRBS) and X-ray Reflectivity (XRR) measurements to characterize Hafnium-based high dielectric constant materials.
15
Synthesis of Ge nanocrystals by atom beam sputtering and subsequent rapid thermal annealing
N. Srinivasa Rao,Anand P. Pathak,N. Sathish,G. Devaraju,V. Saikiran,Pawan K. Kulriya,D. C. Agarwal,G. Sai Saravanan,D.K. Avasthi +8 more
TL;DR: In this article, the atom beam co-sputtering (ABS) method was used for the preparation of Ge nanocrystals embedded in an SiO2 matrix by using X-ray diffraction (XRD) and Raman spectroscopy.
12
SHI irradiation fluence and energyloss dependence effects on Ge NCs with different initial sizes embedded in SiO2
TL;DR: In this paper, the effects of ionization on co-deposited Ge and SiO 2 samples were investigated by X-ray diffraction, Raman spectroscopy and Transmission Electron Microscopy.
10