G. Conte
Polytechnic University of Turin
6 Papers
15 Citations
G. Conte is an academic researcher from Polytechnic University of Turin. The author has contributed to research in topics: Burst noise & Noise (electronics). The author has an hindex of 3, co-authored 6 publications.
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Papers
Small and large signal trap-assisted GR noise modeling in semiconductor devices
Simona Donati Guerrieri,G. Conte,Fabrizio Bonani,Giovanni Ghione +3 more
- 25 May 2004
TL;DR: In this paper, a generalization of the standard Green's function technique to the physics-based noise analysis can be used to propagate the internal fluctuations to the device terminals, in order to evaluate the correlation matrix of the external noise generators.
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Key issues in trap‐assisted low‐frequency device noise simulation in nonlinear large‐signal conditions
Fabrizio Bonani,Francesco Bertazzi,G. Conte,S. Donati Guerrieri,Giovanni Ghione +4 more
- 17 Nov 2005
TL;DR: In this paper, a detailed analysis of the conversion phenomena observed in trap-assisted low-frequency noise conversion in forced large-signal device operation is presented based on a drift-diffusion physical model, with stationary and cyclostationary noise analysis capabilities.
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Physics-based noise modelling of semiconductor devices in largesignal operation including low-frequency noise conversion effects
Giovanni Ghione,Fabrizio Bonani,S. Donati,Francesco Bertazzi,G. Conte +4 more
- 05 Dec 2005
TL;DR: A review of state-of-the-art techniques for the physics-based numerical simulation of noise in semiconductor devices, with particular attention to large-signal forced operation and related noise frequency conversion is provided in this paper.
3
Physics-based Mixer Noise Simulation
Francesco Bertazzi,Fabrizio Bonani,G. Conte,Simona Donati Guerrieri,Giovanni Ghione +4 more
- 01 Jan 2006
TL;DR: In this paper, an advanced mixedmode physics-based device simulator applied to the estimation of the noise properties of microwave mixers is described, where the drift-diffusion model and a proper set of circuit equations describing the device embedding network are solved in the frequency domain with the harmonic balance approach.
3
Low-frequency noise conversion modeling in RF devices under forced nonlinear operation
TL;DR: In this paper, the frequency conversion of low-frequency noise deriving from trap-assisted generation-recombination (GR) noise in RF devices under forced, nonlinear operation through a physics-based noise model is addressed.
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