G. Beyer
IMEC
40 Papers
206 Citations
G. Beyer is an academic researcher from IMEC. The author has contributed to research in topics: Wafer & Dielectric. The author has an hindex of 9, co-authored 40 publications.
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Papers
Advances in SiCN-SiCN Bonding with High Accuracy Wafer-to-Wafer (W2W) Stacking Technology
Lan Peng,S-W Kim,Serena Iacovo,Fumihiro Inoue,Alain Phommahaxay,Erik Sleeckx,J. De Vos,Andy Miller,G. Beyer,Eric Beyne,D. Zinner,Thomas Wagenleitner,Thomas Uhrmann,Markus Wimplinger,Ben Schoenaers,Andre Stesmans,Valery V. Afanas'ev +16 more
- 04 Jun 2018
TL;DR: In this article, the authors present a study of recent studies in material exploration for W2W bonding and advanced W 2W alignment carried out as a holistic approach to enable a robust ultra-fine pitch interconnect for 3D system-on-chip (SoC) technology.
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Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems
Alain Phommahaxay,Samuel Suhard,Pieter Bex,Serena Iacovo,John Slabbekoorn,Fumihiro Inoue,Lan Peng,Koen Kennes,Erik Sleeckx,G. Beyer,Eric Beyne +10 more
- 28 May 2019
TL;DR: The recent developments of wafer-to-wafer bonding technology based on direct assembly of inorganic dielectric materials is offering a path for the continuous need for higher integration density and lower interconnect pitches.
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3D Stacking Using Bump-Less Process for Sub 10um Pitch Interconnects
Jaber Derakhshandeh,Inge De Preter,Carine Gerets,Lin Hou,Nancy Heylen,Eric Beyne,G. Beyer,John Slabbekoorn,Vikas Dubey,Anne Jourdain,Goedele Potoms,Fumihiro Inoue,Geraldine Jamieson,Kevin Vandersmissen,Samuel Suhard,Tomas Webers,Giovanni Capuz,Teng Wang,Kenneth June Rebibis,Andy Miller +19 more
- 18 Aug 2016
TL;DR: In this paper, a bumpless process is introduced in order to further scale down the pitch of microbumps, and electrical resistance measurement, cross section SEM and mechanical characterizations show successful 3D stacking using proposed method.
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A Highly Reliable 1.4μm Pitch Via-Last TSV Module for Wafer-to-Wafer Hybrid Bonded 3D-SOC Systems
Stefaan Van Huylenbroeck,Joeri De Vos,Zaid El-Mekki,Geraldine Jamieson,Nina Tutunjyan,Karthik Muga,Michele Stucchi,Andy Miller,G. Beyer,Eric Beyne +9 more
- 28 May 2019
TL;DR: In this article, the TSV diameter is reduced to 0.7µm by using an APF strippable amorphous carbon film and the bottom dielectric tri-layer, consisting of an STI oxide, a thin SiN and a PMD oxide layer, is etched using a dedicated three-step selective etch recipe.
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