This work presents an overview of the most important mechanisms of radiation damage in silicon detectors to be used for high energy experiments in LHC. The changes in the shallow concentration have been studied by thermally stimulated currents (TSC) after proton and neutron irradiation with fluences up to 10/sup 15/ cm/sup -2/ to investigate the role of thermal donors and the donor-removal effect in standard and oxygen enriched silicon with different resistivities. Deep defects in irradiated silicon have been analysed by deep level transient spectroscopy (DLTS) and photo induced current transient spectroscopy (PICTS) in the same materials. The radiation-induced microscopic disorder has been related with the carrier transport properties of irradiated silicon measured by the Hall effect, by capacitance and current vs. voltage characteristics and with charge collection efficiency. The dependence of the irradiated silicon detectors performances on crystal orientation, on incident particle type and on the initial concentration of oxygen and carbon is also discussed.

Radiation damage in silicon detectors

We described an ultra-thin, high-precision Kapton flex cable for use as a signal router in the L3 Silicon Microvertex Detector. The excellent mechanical and electrical properties of this cable make it dimensionally stable against temperature and humidity changes, as well as maintaining cross talk below 3% between adjacent lines. Electron beam photolithography and chemical etching technology have produced a cable with typically 11 μm wide lines spanning continuous lengths up to 14 cm, with sufficient alignment accuracy to match both input and output pads over the entire length of the detector. Electroplated input and output pads allow automated wire bonding with excellent pull strength and high efficiency.

Ultra-thin, high-precesion flex cable for the L3 Silicon Microvertex Detector

The SVX is a charge preamplifier with a sample and hold stage and sparse readout capability developed at the Lawrence Berkeley Laboratory. The SVX radiation hard version has been used by the SMD collaboration to build the L3 Silicon Microvertex Detector where double-sided AC coupled silicon sensors are read out. The SVX-H test procedure in the SMD detector assembly phase will be described as well as the obtained results.

Experience with the SVX-H chip in the construction of the L3 Silicon Microvertex Detector

The Silicon Microvertex Detector (SMD) was designed to upgrade the central tracking capability of the Luminosity 3 (L3) experiment at the CERN LEP storage ring (Large Electron Positron)1. The SMD allows a two-dimensional measurement of charged particle tracks over the polar angle region 22°<θ<158° and over the full azimuthal region, improving the L3 impact parameter resolution, momentum and Z coordinate measurements. High performance vertex reconstruction depends, among other parameters, on the accurate knowledge of the detector position in space and on its stability in time. A full description of SMD design parameters can be found in2. Each technological operation involved in SMD manufacturing process2,3 requires careful monitor of multiple geometrical parameters, at micron level, for each constitutive part as well as for the whole detector4’5.

Dimensional Measurements Analysis of a Silicon Half Ladeer Microvertex Detector

This paper describes an optical decoupling system built for the readout of double-sided silicon microstrip detectors. The application of the system to the L3 silicon microvertex detector is also described, together with the results of the tests conducted on the readout system with a radioactive source and a prototype microstrip silicon detector.

An optical decoupling system for double-sided silicon microstrip detectors

A report on the status of the construction of the L3 Silicon Microvertex Detector is presented here. The detector will consist of two double sided AC coupled silicon layers equipped with rφ and z readout with an expected intrinsic resolution of ≈ 6 μ m and ≈ 25 μ m respectively. A description of the detector with its mechanical support, alignment system and readout electronics is presented.

Status of the L3 silicon microvertex detector

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Status of the L3 silicon microvertex detector