Fuminori Ito
Renesas Electronics
11 Papers
65 Citations
Fuminori Ito is an academic researcher from Renesas Electronics. The author has contributed to research in topics: Chemical vapor deposition & Plasma polymerization. The author has an hindex of 4, co-authored 11 publications.
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Papers
CVD Co and its application to Cu damascene interconnections
Takeshi Nogami,J. Maniscalco,Anita Madan,Philip L. Flaitz,Patrick W. DeHaven,Christopher Parks,Leo Tai,B. St. Lawrence,R. J. Davis,R. Murphy,Timothy M. Shaw,Stephan A. Cohen,C.-K. Hu,Cyril Cabral,Sunny Chiang,James J. Kelly,M. Zaitz,J. Schmatz,Samuel S. Choi,Kazumichi Tsumura,Christopher J. Penny,H. Chen,Donald F. Canaperi,Tuan A. Vo,Fuminori Ito,Oscar van der Straten,A. Simon,S-H. Rhee,B-Y. Kim,Tibor Bolom,Vivian W. Ryan,Paul F. Ma,J. Ren,Joseph F. Aubuchon,J. Fine,P. Kozlowski,Terry A. Spooner,Daniel C. Edelstein +37 more
- 06 Jun 2010
TL;DR: In this article, a variety of micro-analytical techniques for CVD Co with nano-scale copper interconnects were studied for the purpose of analyzing the properties of in-film oxygen and carbon.
44
Patent
Wiring structure, semiconductor device and manufacturing method thereof
Fuminori Ito,Yoshihiro Hayashi,Tsuneo Takeuchi +2 more
- 30 Aug 2011
TL;DR: In this article, a method for manufacturing a semiconductor device having a transistor mounted in a wiring of a plural-layer structure includes in manufacturing the semiconductor devices that is formed on an embedded semiconductor element and includes a barrier insulating film, a porous interlayer insulating material, a wiring, a via plug formed by embedding a metal wiring material in a wire trench, and a via hole formed in the porous inter layer insulating layer.
12
UV cure impact on robust low-k with sub-nm pores and high carbon content for high performance Cu/low-k BEOL modules
Naoya Inoue,Fuminori Ito,Hosadurga Shobha,Stephen M. Gates,Errol Todd Ryan,Kumar Virwani,N. Klvmko,Anita Madan,Leo Tai,E. Adams,Stephan A. Cohen,Eric G. Liniger,Chenming Hu,Mignot Yann,Alfred Grill,Terry A. Spooner +15 more
- 13 Jun 2013
TL;DR: In this article, a robust low-k with sub-nm pore and high carbon content (R-ELK=Robust ELK) was studied to enhance the modulus of the film.
6
Patent
Semiconductor device including porous layer covered by poreseal layer
Masayoshi Tagami,Fuminori Ito +1 more
- 09 Feb 2011
TL;DR: In this article, a method of forming a semiconductor device includes forming a trench on a porous insulating film, placing a chemical material including a structure comprising Si-O- including vinyl group on a surface of the porosity, and performing polymerization of the chemical material to provide a dielectric film having a density higher than that of porosity.
2
Patent
Method for manufacturing a semiconductor device and a semiconductor device
Hironori Yamamoto,Fuminori Ito,Yoshihiro Hayashi +2 more
- 06 May 2013
TL;DR: In this article, the ratio of the added oxidant gas to the flow rate of the carrier gas is more than 0 and 0.08 or less, where the ratio is defined as the difference between the two ratios.
2