Abstract Sensing and recognizing invisible ultraviolet (UV) light is vital for exploiting advanced artificial visual perception system. However, due to the uncertainty of the natural environment, the UV signal is very hard to be detected and perceived. Here, inspired by the tetrachromatic visual system, we report a controllable UV-ultrasensitive neuromorphic vision sensor (NeuVS) that uses organic phototransistors (OPTs) as the working unit to integrate sensing, memory and processing functions. Benefiting from asymmetric molecular structure and unique UV absorption of the active layer, the as fabricated UV-ultrasensitive NeuVS can detect 370 nm UV-light with the illumination intensity as low as 31 nW cm −2 , exhibiting one of the best optical figures of merit in UV-sensitive neuromorphic vision sensors. Furthermore, the NeuVS array exbibits good image sensing and memorization capability due to its ultrasensitive optical detection and large density of charge trapping states. In addition, the wavelength-selective response and multi-level optical memory properties are utilized to construct an artificial neural network for extract and identify the invisible UV information. The NeuVS array can perform static and dynamic image recognition from the original color image by filtering red, green and blue noise, and significantly improve the recognition accuracy from 46 to 90%. 

https://www.nature.com/articles/s41467-023-37973-0.pdf

Tetrachromatic vision-inspired neuromorphic sensors with ultraweak ultraviolet detection

[1]benzothieno[3,2‐b]benzothiophene (BTBT), with two benzene rings as the outermost rings, is referred to as diacene‐fused ladder‐type π‐conjugated thienothiophenes. During the last three decades, derivatives based on BTBT core have been extensively studied due to their tremendous application prospects in organic field‐effect transistors (OFETs) and organic optoelectronic devices. In order to further advance the development of organic electronics, new materials are constantly being synthesized and new methods are constantly evolving. This review mainly focuses on the crystal and electronic structures of BTBT derivatives, the soluble and thermal properties, the fabrication methods, as well as the strategies for performance improvement and optoelectronic applications including OFETs, photodetectors, synaptic devices, and organic light‐emitting transistors. As one of the most promising organic materials, the insight into BTBT‐based molecules will accelerate their potential application and provide important reference value for the development toward commercialized and industrialized organic semiconducting products.

Structures, Properties, and Device Applications for [1]Benzothieno[3,2‐b]Benzothiophene Derivatives

Chalcogenide‐based semiconductors have recently emerged as promising candidates for optoelectronic applications, mainly benefiting from their facile and low‐cost processability, chemical versatility, and tunable optoelectronic properties. Despite the recent success of chalcogenide‐based thin‐film photovoltaics, they have been barely leveraged in photodetection, mainly due to the complicated charge transport related to the trap states. In addition, most of the chalcogenide photodetectors are reported for broadband, visible photodetection, which is facile but lacks of impact for real applications. However, it is also possible to modulate the charge carrier dynamics of chalcogenide‐based materials, and devise novel devices, which can possess extra compelling features. These possibilities provide strong incentives for a detailed study on the chalcogenides‐based narrowband photodetectors, which are achieved by a filterless, charge collection narrowing strategy. The optimized narrowband photodetectors also exhibit extremely fast‐response (≈240 ns), relatively low dark current and noise, large linear dynamic range, and most importantly tunable spectral discrimination covering the whole range from UV to NIR. These devices also demonstrate great potential for imaging and communication.

Chalcogenide‐Based Narrowband Photodetectors for Imaging and Light Communication

Chalcogenide-based semiconductors have recently emerged as promising candidates for optoelectronic devices, benefiting from their low-cost, solution processability, excellent stability and tunable optoelectronic properties. However, the understanding of their fundamental optoelectronic properties is far behind the success of device performance and starts to limit their further development. To fill this gap, we conduct a comparative study of chalcogenide absorbers across a wide material space, in order to assess their suitability for different types of applications. We utilize optical-pump terahertz-probe spectroscopy and time-resolved microwave conductivity techniques to fully analyze their charge-carrier dynamics. We show that antimony-based chalcogenide thin films exhibit relatively low charge-carrier mobilities and short lifetimes, compared with bismuth-based chalcogenides. In particular, AgBiS2 thin films possess the highest mobility, and Sb2S3 thin films have less energetic disorder, which are beneficial for photovoltaic devices. On the contrary, Bi2S3 showed ultralong carrier lifetime and high photoconductive gain, which is beneficial for designing photoconductors. 

Charge-Carrier Dynamics of Solution-Processed Antimony- and Bismuth-Based Chalcogenide Thin Films

Silver antimony sulfide, as a ternary chalcogenide, has attracted great attention in the field of optoelectronics in recent years. In particular, it has appealing properties, such as excellent stability, solution processability, and versatile composition tunability. Benefiting from the recent development of processing techniques, AgSbS2 has emerged as a promising candidate for next-generation, thin-film photovoltaics. On the contrary, AgSbS2-based photodetectors have been barely reported. In this work, we systematically investigated the composition engineering of silver antimony sulfide compounds with a precursor route. Their optoelectronic properties were fully characterized, and the composition was optimized for photodetection. High-performance phototransistors were first reported based on field-effect thin film transistors with interfacial modification. The obtained AgSbS2 phototransistors exhibited relatively high photosensitivity, low dark current and noise, superior device stability, and excellent detectivity covering the whole range from ultraviolet to near-infrared, highlighting the great potential for next-generation photodetection.

Optoelectronic Modulation of Silver Antimony Sulfide Thin Films for Photodetection.

In recent years, AgBiS2 has received great attention in optoelectronics thanks to its fascinating merits, including a suitable bandgap, large absorption coefficient from ultraviolet to near-infrared and remarkable material stability. However, the poor carrier transport properties limit its further development and applications. To address this issue, we propose a composite strategy to facilitate the carrier transport of AgBiS2 QD films. The AgBiS2–organic hybrid films demonstrated enhanced photoconductivity. Then, we fabricated phototransistors based on these blend films, and achieved a high photosensitivity (Ilight/Idark) of 1.5 × 103, a decent responsivity of up to 20 A W−1, an excellent specific detectivity of 4 × 1013 Jones under low UV illumination and remarkable device stability. These results again demonstrate the great potential of AgBiS2 for next generation solution-processed photodetectors.

Ultrasensitive UV-NIR Broadband Phototransistors Based on AgBiS2-organic Hybrid Films

• Surprising room-temperature CO sensing capacity is first revealed for Pt-SnO2 composite ceramics. • Room-temperature CO sensing capacity degrades rather quickly for most Pt-SnO2 ceramics. • Pt-SnO 2 ceramics of 10 wt% Pt show an unusually stable room-temperature CO sensing capacity. • Room-temperature CO sensing capacity of aged Pt-SnO 2 ceramics is fully restored through a heat-treatment at 200 °C for 10 min. Pt-SnO 2 composite nanoceramics with 1, 2, 5, and 10 wt% Pt separately were prepared through pressing and sintering. All samples showed strong and fast response to CO at room temperature. The responses of samples of 1, 2, 5 wt% Pt decreased very quickly with time, while that of samples of 10 wt% Pt was much more stable. Brief heat-treatments had been tested and the CO-sensing capability of a 384 h aged sample of 10 wt% Pt was fully restored to that as-sintered through a heat-treatment of 200 °C for 10 min. It is proposed that the deposition of impurity gases in air results in the observed aging and brief heat treatments are able to remove them. Two closely related strategies, namely a suitable Pt content and a periodic heat-treatment, are suggested for room temperature CO-sensitive Pt-SnO 2 composite nanoceramics to ensure a high long-term stability and a reasonable cost simultaneously. 

Achieving a high long-term stability for room temperature CO-sensitive Pt-SnO2 composite nanoceramics through two strategies

A high long-term stability is crucial for room-temperature gas-sensitive metal oxide semiconductors (MOSs) to find practical applications. A series of Pd-SnO2 mixtures with 2, 5, and 10 wt% Pd separately were prepared from SnO2 and Pd powders. Through pressing and sintering, Pd-SnO2 composite nanoceramics have been successfully prepared from the mixtures, which show responses of 50, 100, and 60 to 0.04% CO-20% O2-N2 at room temperature for samples of 2, 5, and 10 wt% Pd, respectively. The room-temperature CO-sensing characteristics were degraded obviously after dozens of days’ aging for all samples. For samples of 5 wt% Pd, the response to CO was decreased by a factor of 4 after 20 days of aging. Fortunately, some rather mild heat treatments will quite effectively reactivate those aged samples. Heat treatment at 150 °C for 15 min in air tripled the response to CO for a 20 days-aged sample of 5 wt% Pd. It is proposed that the deposition of impurity gases in air on Pd in Pd-SnO2 composite nanoceramics has resulted in the observed aging, while their desorption from Pd through mild heat treatments leads to the reactivation. More studies on aging and reactivation of room-temperature gas sensitive MOSs should be conducted to achieve high long-term stability for room-temperature MOS gas sensors.

/pdf/aging-behavior-and-heat-treatment-for-room-temperature-co-kmvht6in.pdf

Aging Behavior and Heat Treatment for Room-Temperature CO-Sensitive Pd-SnO2 Composite Nanoceramics

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Ultrasensitive UV-NIR Broadband Phototransistors Based on AgBiS2-organic Hybrid Films

Achieving a high long-term stability for room temperature CO-sensitive Pt-SnO2 composite nanoceramics through two strategies

Aging Behavior and Heat Treatment for Room-Temperature CO-Sensitive Pd-SnO2 Composite Nanoceramics