Franz Stimpfl
Vienna University of Technology
8 Papers
15 Citations
Franz Stimpfl is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Mesh generation & Programming paradigm. The author has an hindex of 2, co-authored 8 publications.
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Papers
GUIDE: Parallel library-centric application design by a generic scientific simulation environment
TL;DR: A parallel generic scientific simulation environment has been developed to ease the transition from single-core to multi-core systems without additional development activity.
A robust parallel delaunay mesh generation approach suitable for three-dimensional TCAD
Franz Stimpfl,René Heinzl,Philipp Schwaha,Siegfried Selberherr +3 more
- 10 Oct 2008
TL;DR: A new approach for mesh generation has been developed to fulfill the requirements of three-dimensional TCAD with respect to a full utilization of the available upcoming computational power of multi-core CPUs.
A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms
Georg Mach,René Heinzl,Philipp Schwaha,Franz Stimpfl,Josef Weinbub,Siegfried Selberherr,Camillo Sherif +6 more
- 17 Sep 2010
TL;DR: A path from in‐situ imaging to flow simulations and different modules for obtaining anatomically accurate and allover smooth meshes suitable for computed fluid dynamics (CFD) as well as methods for computing the blood flow in a robust and high performing way are described.
Concepts for High-Perfomance Scientific Computing
René Heinzl,Philipp Schwaha,Franz Stimpfl,Siegfried Selberherr +3 more
- 22 Jul 2007
TL;DR: The fundamental goal of the approach is to create a high-performance mathematical framework with reusable domain-specific abstractions which are close to the mathematical notations to describe many problems in scientific computing.
2
Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics
Stanislav Tyaginov,Viktor Sverdlov,W. Gos,Philipp Scwaha,René Heinzl,Franz Stimpfl,Tibor Grasser +6 more
TL;DR: In this paper, the McPherson model was extended to a single SiO4 tetrahedron to capture the influence of the whole lattice, which substantially increases the activation energy for the Si-O bond rupture.