There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

http://ieeexplore.ieee.org/iel5/5610941/5624686/05624745.pdf

Power electronics

Hydrogen sensors are of increasing importance in connection with the development and expanded use of hydrogen gas as an energy carrier and as a chemical reactant. There are an immense number of sensors reported in the literature for hydrogen detection and in this work these sensors are classified into eight different operating principles. Characteristic performance parameters of these sensor types, such as measuring range, sensitivity, selectivity and response time are reviewed and the latest technology developments are reported. Testing and validation of sensor performance are described in relation to standardisation and use in potentially explosive atmospheres so as to identify the requirements on hydrogen sensors for practical applications.

Hydrogen Sensors - A review

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

This paper presents a comprehensive study on the optimisation of the lifetime profile in the drift region of 1.2kV planar and trench 4H-SiC MOSFETs. The performance of the body diodes is examined for the first time for a range of single step lifetime profiles in the epi region by means of a dedicated TCAD model, thereby enabling the identification of a trade-off between the voltage drop, the reverse recovery, and the risk of forward bias degradation. Based on this, a set of buffer designs is investigated as a means of containing bipolar degradation and hence loosening this trade-off.

Optimisation of the carrier lifetime profile in 1.2kV planar and trench SiC MOSFETs

Characterising trench IGBTS for resonant switching conditions using single ended and half-bridge application circuits

A power semiconductor device and method for making same are disclosed. The device includes a source bonding pad and a drain bonding pad, a drain metallization structure including a drain field plate connected to the drain bonding pad, and a source metallization structure comprising a source field plate connected to the source bonding pad. At least a portion of at least one of the bonding pads is situated directly over an active area. A dimension of at least one of the field plates varies depending upon the structure adjacent to the field plate.

Power semiconductor device with optimized field-plate design

The trench insulated gate bipolar transistor (IGBT) is widely regarded as a worthy replacement of DMOS IGBTs and GTO thyristors in a wide range of applications, from motor control (1.4 kV) to HVDC (6.5 kV). An optimum design of 1.4 kV NPT trench IGBTs using a new fully integrated optimisation system comprised of process and device simulators and an RSM optimiser is described. The use of this new TCAD system has contributed largely to realising devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4 kV trench IGBTs are reported, which are in excellent agreement with the TCAD predictions.

Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices

Recently, a number of "fine pattern" and "Narrow Mesa" IGBT cell structures with sub-μm trench and mesa dimensions have been proposed to achieve improved on-state and switching losses. On the other hand, Super Junction IGBT structures have also been proposed. For the first time, in this paper, we analyse the Narrow Mesa Super Junction IGBT (NM SJ-IGBT) performance in terms of on-state and switching trade-off as well as short-circuit safe operating area (SCSOA) robustness. It is shown that a NM SJ-IGBT structure can have not only a better Losses-vs-Vce(sat) trade-off but also a better SCSOA in comparison with conventional NM-IGBT. Keywords—IGBT, Narrow mesa, MOS, Trench, Super-junction.

750V Narrow Mesa IGBT vs SJ-IGBT: Performance and SC-SOA Assessment

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