Florin Udrea

TL;DR: In this paper, a comprehensive study of the static and dynamic performance of diodes using lifetime control technology in comparison with dioded using other techniques is made. But the optimum reduced lifetime region is not always at the anode p-n junction and the optimisation of the location depends on the current decreasing rate di/dt and other device parameters such as the lifetime in the whole n-drift region.

TL;DR: In this article, a semiconductor device includes a drift region, an anode region of a second conductivity type, an inversion region of the second conductivities type situated above the drift region and an enhancement region between the first and the inversion regions.

TL;DR: In this paper, a planar edge termination based on a field plate overlapping on oxide ramp at the periphery of the contact has been proposed for 6H-SiC and pn photodiodes with oxide ramp termination.