There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

http://ieeexplore.ieee.org/iel5/5610941/5624686/05624745.pdf

Power electronics

Hydrogen sensors are of increasing importance in connection with the development and expanded use of hydrogen gas as an energy carrier and as a chemical reactant. There are an immense number of sensors reported in the literature for hydrogen detection and in this work these sensors are classified into eight different operating principles. Characteristic performance parameters of these sensor types, such as measuring range, sensitivity, selectivity and response time are reviewed and the latest technology developments are reported. Testing and validation of sensor performance are described in relation to standardisation and use in potentially explosive atmospheres so as to identify the requirements on hydrogen sensors for practical applications.

Hydrogen Sensors - A review

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

This paper describes the concept, fabrication and characterisation of a dual gate lateral inversion layer emitter transistor (DGLILET). Although the use of an inversion layer as an emitter was proposed by Udrea and Amaratunga (Proc. ISPSD'97, p. 305-308, 1997), this is the first report of a DGLILET using a p-type inversion layer. Compared with other work previously published on vertical (Huang, Solid-State Electron., vol. 38, no. 4, p. 829-838) and lateral devices (Hardikar et al, Proc. ISPSD'99, p 261-264, 1999; Chun, Proc. ISPSD'2000, p. 149-152, 2000), this device achieves a smooth I-V characteristic without trading off on-state against switching performance by minority carrier injection using a dynamic inversion layer. The device is particularly attractive for emerging high voltage integrated circuits where achieving a high current density with minimum losses is particularly important.

Dual gate lateral inversion layer emitter transistor

The quasi-saturation (QS) effect in a power MOSFET has been discovered several decades ago. As the field has evolved and the dimensions in power MOSFETs have changed from tens of micrometers to submicrometer levels, and the gate geometry has evolved from planar to trench, the origin and the effect of the QS need to be re-assessed. This letter first discusses the origin of the QS effect in the state-of-the-art power MOSFETs and subsequently analyses the phenomenon of majority carrier injection (or diffusion) and its contribution to the increased carrier concentration in the drift region, specific to quasi-saturation.

On the Quasi-Saturation in State-of-the-Art Power MOSFETs

A unipolar accumulation transistor configuration has recently been proposed and experimentally demonstrated. This transistor has a simple structure with Ohmic contacts and only one doping type. The device, termed the accumulation metal oxide semiconductor field effect transistor (AMOSFET), relies on having a nanoscale depth dimension, which forces the current through an accumulated (on state) or depleted (off state) region. Detailed numerical modeling presented here elucidates the previously proposed and experimentally observed AMOSFET features. These include linear and saturation currents which depend on doping rather than gate capacitance, good subthreshold swing behavior, and low threshold voltages. This modeling predicts on-off ratios exceeding 109.

Numerical modeling study of the unipolar accumulation transistor

A Silicon-on-Insulator Platform Functionalized By Atomic Layer Deposition for Humidity Sensing

15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, major breakthrough in the field of silicon power devices. Today, the SuperJunction MOSFET technologies have reached a mature stage characterized by gradual performance improvements. SuperJunction Insulated Gate Bipolar Transistors (SJ IGBTs) could interrupt this stagnation holding promise to revitalize voltage classes from 600 up to 1200 V. Such SJ IGBTs surpass by a very significant margin their SJ MOSFET counterparts both in terms of power handling capability, on-state and turn-off losses, all at the same time. On the higher end of the voltage class, SJ IGBTs would top the performance of 1.2 kV IGBTs by a similar margin.

SuperJunction IGBTS: An evolutionary step of silicon power devices with high impact potential

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