Florin Udrea
University of Cambridge
582 Papers
3.9K Citations
Florin Udrea is an academic researcher from University of Cambridge. The author has contributed to research in topics: Silicon on insulator & Power semiconductor device. The author has an hindex of 39, co-authored 553 publications. Previous affiliations of Florin Udrea include University of Sheffield & Wellington Management Company.
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Papers
A maskless etching technique for fabrication of 3D MEMS structures in SOI CMOS devices
TL;DR: In this article, a maskless etching technique for fabrication of 3D MEMS structures has been presented, which takes advantage of the UV (ultra violet) transparent dielectric membrane supporting the CMOS-process based micro structures, where the UV light exposure of the photoresist on the top surface of the device is carried out from the reverse side through the UV-transparent membrane.
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Power devices for high voltage integrated circuits: new device and technology concepts
Gehan A. J. Amaratunga,Florin Udrea +1 more
- 16 Sep 2001
TL;DR: In this paper, the authors explored new device concepts in comparison with classical LDMOSFETs and LIGBTs and proposed alternative technologies to the conventional junction-isolation technology, such as high voltage SOI technology.
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Low power NDIR CO 2 sensor based on CMOS IR emitter for boiler applications
S. Z. Ali,A. De Luca,Zoltán Rácz,P. Tremlett,Tracy Wotherspoon,Julian W. Gardner,Florin Udrea +6 more
- 01 Nov 2014
TL;DR: In this article, the authors demonstrate the use of a CMOS infra-red emitter in a low power Non Dispersive Infra Red (NDIR) based carbon dioxide sensor for application in domestic boilers.
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Ambient temperature carbon nanotube ammonia sensor on CMOS platform
Sumita Santra,Sumita Santra,Arun Kumar Sinha,Samit K. Ray,Syed Zeeshan Ali,Florin Udrea,Florin Udrea,Julian W. Gardner,Julian W. Gardner,Prasanta Kumar Guha,Prasanta Kumar Guha +10 more
TL;DR: In this paper, a resistive single wall carbon nanotubes (SWCNTs) sensor was developed based on a CMOS substrate that responds at ambient temperature to ppm levels of ammonia.
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Novel buried field rings edge termination for 4H-SiC high-voltage devices
A. Mihaila,Florin Udrea,Phillippe Godignon,T. Trajkovic,Gheorghe Brezeanu,Jose Rebollo,José Millan +6 more
TL;DR: In this paper, a numerical study of a novel edge termination technique for 4H-SiC high voltage devices is presented, where 4 BFRs are used in SiC devices as an effective termination method.
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