Florin Udrea
University of Cambridge
582 Papers
3.9K Citations
Florin Udrea is an academic researcher from University of Cambridge. The author has contributed to research in topics: Silicon on insulator & Power semiconductor device. The author has an hindex of 39, co-authored 553 publications. Previous affiliations of Florin Udrea include University of Sheffield & Wellington Management Company.
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Papers
Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area
Marina Antoniou,Neophytos Lophitis,Florin Udrea,Munaf Rahimo,Umamaheswara Vemulapati,Chiara Corvasce,U. Badstuebner +6 more
TL;DR: In this article, a new type of high-voltage termination, namely the "deep p-ring trench" termination design for highvoltage, high-power devices, is presented and extensively simulated.
Modeling Voltage derivative during inductive turnoff in thin SOI LIGBT
TL;DR: In this paper, the voltage derivative during inductive turnoff for a silicon-on-insulator (SOI) lateral IGBT (LIGBT) is analyzed in detail and a complete model which accounts for the voltage rise is implemented through an accurate calculation of the equivalent output capacitance.
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Absorption characteristics of single wall carbon nanotubes
Haque,C Marinelli,Florin Udrea,William I. Milne +3 more
- 07 May 2006
TL;DR: In this article, the absorption coefficient of carbon nanotube is determined to be equal to ~24 x 10 4 cm -1, and the implications of such strong absorption value are discussed.
Optically triggered Schottky barrier diodes in single crystal diamond
Mihai Brezeanu,S.J. Rashid,T. Butler,Nalin L. Rupesinghe,Florin Udrea,Ken Okano,Gehan A. J. Amaratunga,Daniel J. Twitchen,A. Tajani,C. Wort,M. Dixon +10 more
TL;DR: In this paper, an optically triggered Schottky barrier diode (SBD) structure was proposed, which operates by going into avalanche breakdown with the aid of incident photons from a light source.
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An analytic model for turn off in the silicon-on-insulator LIGBT
TL;DR: In this paper, a quasi-static analytic model is derived to explain the turn off characteristic of LIGBT transistors, where the rate of expansion of the depletion region with respect to the anode current is infinite.
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