Florin Udrea
University of Cambridge
582 Papers
3.9K Citations
Florin Udrea is an academic researcher from University of Cambridge. The author has contributed to research in topics: Silicon on insulator & Power semiconductor device. The author has an hindex of 39, co-authored 553 publications. Previous affiliations of Florin Udrea include University of Sheffield & Wellington Management Company.
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Papers
True Origin of Gate Ringing in Superjunction MOSFETs: Device View
Hyemin Kang,Florin Udrea +1 more
TL;DR: In this paper, the gate ringing is highly related to the input capacitance, and the exact origin of gate ringing has not been identified as the conventional three-terminal measurement method cannot capture the dynamic behavior of the device, in particular the redistribution of charge between the different internal capacitive components.
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An Analytical Model for the Lateral Insulated Gate Bipolar Transistor (LIGBT) on Thin SOI
TL;DR: In this paper, the authors report a complete analytical model for the lateral IGBT based on semiconductor physics with very few fitting parameters, implemented in the widely available circuit simulator PSpice.
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CMOS gas sensors and smart devices
Julian W. Gardner,Marina Cole,Florin Udrea +2 more
- 07 Nov 2002
TL;DR: Developments in the last decade towards making silicon-based gas sensors and smart sensor systems are reviewed and a range of different transduction principles is considered and the technologies that underpin them are considered.
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Analysis of static and dynamic behaviour of SiC and Si devices connected in cascode configuration
Andrei Mihaila,Florin Udrea,R. Azar,Gheorghe Brezeanu +3 more
- 16 Sep 2001
TL;DR: In this article, the static and dynamic behavior of a 1.2 kV SiC vertical JFET was analyzed and compared to a SiC trench MOSFET.
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SiC junction FETs - a state of the art review
A. Mihaila,Florin Udrea,S.J. Rashid,Phillippe Godignon,José Antonio Alloza Millán +4 more
- 19 Dec 2005
TL;DR: In this article, the authors present the present status of SiC junction-controlled devices and discuss the different approaches one may decide on when considering SiC JFETs for high power, high temperature applications.
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