Florin Udrea
University of Cambridge
582 Papers
3.9K Citations
Florin Udrea is an academic researcher from University of Cambridge. The author has contributed to research in topics: Silicon on insulator & Power semiconductor device. The author has an hindex of 39, co-authored 553 publications. Previous affiliations of Florin Udrea include University of Sheffield & Wellington Management Company.
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Papers
Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions
Arnab Biswas,G. V. Luong,M. Foysol Chowdhury,Cem Alper,Qing-Tai Zhao,Florin Udrea,Siegfried Mantl,Adrian M. Ionescu +7 more
TL;DR: In this article, a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs is presented, which can accurately describe both n-and p-ambipolarity, superlinear onset of output characteristics, and temperature dependence.
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Silicon MOS controlled bipolar power switching devices using trench technology
T. Trajkovic,Florin Udrea,Gehan A. J. Amaratunga,William I. Milne,S.S.M. Chan,P. Waind,J. Thomson,D.E. Crees +7 more
TL;DR: In this article, a review of the development of trench gate IGBTs is given and new promising device structures based on trench technology which use PIN diode and thyristor type carrier distributions to reduce power losses within the device.
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Innovative designs enable 300-V TMBS® with ultra-low on-state voltage and fast switching speed
Wesley Chih-Wei Hsu,Florin Udrea,Pai-Li Lin,Yih-Yin Lin,Max Chen +4 more
- 23 May 2011
TL;DR: In this article, a 300-V TMBS rectifier with a combination of p-transparent anode and Schottky contact has been proposed and demonstrated, where a floating p-layer is used in termination region under a trench area to enhance the blocking capability.
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Identification and quantification of different vapours using a single polymer chemoresistor and the novel dual transient temperature modulation technique
TL;DR: In this paper, a signal processing technique for a square wave temperature modulated carbon black/polymer composite sensor is presented, which consists of only two mathematical operations: summing the off- and on-transients of the conductance signals, and subtracting the steady-state conductance signal.
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Experimentally validated three dimensional GCT wafer level simulations
Neophytos Lophitis,Marina Antoniou,Florin Udrea,Iulian Nistor,Martin Arnold,Tobias Wikstrom,Jan Vobecky +6 more
- 03 Jun 2012
TL;DR: In this article, a wafer level three-dimensional simulation model of the gate commutated Thyristor (GCT) under inductive switching conditions is presented, which allows the in depth study of large area devices such as GCTs, Gate Turn Off Thyristors (GTOs) and Phase Control ThyristORS (PCTs).
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