Florian Bärwolf
6 Papers
29 Citations
Florian Bärwolf is an academic researcher. The author has contributed to research in topics: Chemistry & Medicine. The author has an hindex of 1, co-authored 1 publications.
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Papers
Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes
Tiangui You,Xin Ou,Gang Niu,Florian Bärwolf,Guodong Li,Nan Du,Danilo Bürger,Ilona Skorupa,Qi Jia,Wenjie Yu,Xi Wang,Oliver G. Schmidt,Heidemarie Schmidt +12 more
TL;DR: The localresistive switching investigated by current sensing atomic force microscopy suggests the capability of down-scaling the resistive switching cell to one BiFeO3 grain size by local Ti implantation of the bottom electrode.
Vertical GeSn nanowire MOSFETs for CMOS beyond silicon
Mingshan Liu,Yannik Junk,Yi Han,Dong Yang,Jin Hee Bae,Marvin Frauenrath,Jean-Michel Hartmann,Zoran Ikonic,Florian Bärwolf,Andrea Mari,Detlev Grützmacher,Joachim Knoch,Dan Buca,Qing-Tai Zhao +13 more
TL;DR: In this article , the authors present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si, which enables high mobility channel materials for improved device performance at low power levels.
Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation.
Christoph Janowitz,Ali Mahmoodinezhad,Małgorzata Kot,Carlos Morales,Franziska Naumann,Paul Plate,Marvin Hartwig Zoellner,Florian Bärwolf,David Stolarek,Christian Wenger,Karsten Henkel,Jan Ingo Flege +11 more
TL;DR: In this paper , an Al2O3/ZnO heterojunction was grown on a Si single crystal substrate by subsequent thermal and plasma-assisted atomic layer deposition (ALD) in situ.
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Investigation of Doping Processes to Achieve Highly Doped Czochralski Germanium Ingots
Aravind Subramanian,Nickolay Abrosimov,A. S. Gybin,Christo Guguschev,Uta Juda,Andreas Fiedler,Florian Bärwolf,Ioan Costina,Albert Kwasniewski,André Dittmar,R. Radhakrishnan Sumathi +10 more
TL;DR: In this paper , a total of 5 ingots were grown by the Czochralski technique: two undoped germanium ingots as a reference and three doped ingots with 10 18 , 10 19 , and 10 20 atoms/cm 3 respectively.
Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing
Ahmad Echresh,Slawomir Prucnal,Zichao Li,René Hübner,Fabian Ganss,O. Steuer,Florian Bärwolf,Shima Jazavandi Ghamsari,Manfred Helm,Shengqiang Zhou,Artur Erbe,Lars Rebohle,Yordan M. Georgiev +12 more
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