Low-dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb2 Se3 nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb2 Se3 NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle-resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb2 Se3 NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb2 Se3 NW exhibit a wide spectral photoresponse range from visible to NIR (400-900 nm). Owing to the high crystallinity of Sb2 Se3 NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W-1 , and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb2 Se3 NW, the device exhibits polarization-dependent photoresponse. The high crystallinity and superior anisotropy of Sb2 Se3 NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.

Chemical Vapor Deposition Growth of High Crystallinity Sb2Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors

Facile preparation and enhanced photoelectrical performance of Sb2Se3 nano-rods by magnetron sputtering deposition

Due to their excellent and tailorable optoelectronic performance, low cost, facile fabrication, and compatibility with flexible substrates, solution-processed inorganic and hybrid photo-active materials have attracted extensive interest for next-generation photodetector applications. This review gives a comprehensive compilation of solution-processed photodetectors. The basic structures of the device and important parameters of photodetectors will be firstly summarized. Then the development of various solution processing technologies containing solution synthesis and liquid phase film-forming processes for the preparation of semiconductor films is described. From the materials science point of view, we give a comprehensive overview about the current status of solution processed semiconductor materials including inorganic and hybrid photo-active materials for the application of photodetectors. Moreover, challenges and future trends in the field of solution-processed photodetectors are proposed.

Recent advances in solution-processed photodetectors based on inorganic and hybrid photo-active materials

Antimony selenide (Sb2Se3) is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties. Achieving high-performance self-powered Sb2Se3 photodetector through a synergistic regulation of absorber layer and heterojunction interface demonstrates great potential and needs essential investigation. In this study, an effective two-step thermodynamic/kinetic deposition technique containing sputtered and selenized Sb precursor is implemented to induce self-assembled growth of Sb2Se3 light absorbing thin film with large crystal grains and desirable [hk1] orientation, presenting considerable thin-film photodetector performance. Furthermore, aluminum (Al3+) cation dopant is introduced to modify the optoelectronic properties of CdS buffer layer, and further optimize the Sb2Se3/CdS (Al) heterojunction interface quality. Thanks to the suppressed carrier recombination and enhanced carrier transport kinetics, the champion Mo/Sb2Se3/CdS (Al)/ITO/Ag photodetector exhibits self-powered and broadband characteristics, accompanied by simultaneously high responsivity of 0.9 A W−1 (at 11 nW/cm2), linear dynamic range of 120 dB, impressive ON/OFF switching ratio over 106 and signal-to-noise ratio of 109, record total noise determined realistic detectivity of 4.78 × 1012 Jones, and ultra-fast response speed with rise/decay time of 24/75 ns, representing the top level for Sb2Se3-based photodetectors. This intriguing work opens up an avenue for its self-powered broadband photodetector applications. 

https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/inf2.12400

Carrier recombination suppression and transport enhancement enable high‐performance self‐powered broadband
 
 Sb
 2
 Se
 3
 
 photodetectors

Self-powered, high-speed Sb2Se3/Si heterojunction photodetector with close spaced sublimation processed Sb2Se3 layer

An effective colloidal process involving the hot-injection method is developed to synthesize uniform single-crystalline Sb2Se3 nanorods in high yields. The photoconductive characteristics of the as-synthesized Sb2Se3 nanorods are investigated by developing a film-based photodetector and this device displays a remarkable response to visible light with an “ON/OFF” ratio as high as 50 (with an incident light density of 12.05 mW cm−2), short response/recovery times and long-term durability. To overcome the challenge of the intrinsic low electrical conductivity of Sb2Se3, hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure having a type-II band alignment are firstly prepared. The electric current of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film has been significantly increased both in the dark and under light illumination. The responsivity of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film is about 4.2 times as much as that of the photodetector based on the Sb2Se3 nanorod film. This improvement can be considered as an important step to promote Sb2Se3 based semiconductors for applications in high performance photodetectors.

Facile synthesis of hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure for high performance photodetectors

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Facile synthesis of hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure for high performance photodetectors