3 Papers
9 Citations
Feng Yang is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Thermal & Bipolar junction transistor. The author has an hindex of 2, co-authored 3 publications. Previous affiliations of Feng Yang include Chinese PLA General Hospital.
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Papers
Thermal performance of insulated gate bipolar transistor module using microchannel cooling base plate
TL;DR: In this article, two novel microchannel designs (i.e., longitudinal counter-flow microchannel and horizontal counter flow microchannel) were proposed for the base plate cooling of the IGBT module, in order to overcome the high junction temperature and non-uniform temperature distribution.
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Thermal performance of insulated gate bipolar transistor module using microchannel cooling base plate
TL;DR: In this paper , two microchannel designs (i.e., longitudinal counter-flow microchannel and horizontal counter flow microchannel) were proposed for the base plate cooling of the IGBT module, and a heat transfer model was developed to investigate the heat transfer performance.
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Dual VEGF/PDGF knockdown suppresses vasculogenic mimicry formation in choroidal melanoma cells via the Wnt5a/β-catenin/AKT signaling pathway
Хамраев Искандар Муротжонович,Feng Yang +1 more
- 01 Jan 2022
TL;DR: In this article , the effects of VEGF/PDGF knockdown on vasculogenic mimicry (VM) formation in choroidal melanoma (CM) cells were explored.
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