https://dr.ntu.edu.sg/bitstream/10356/101824/1/A%20comprehensive%20review%20on%20the%20progress%20of%20lead%20zirconate-based%20antiferroelectric%20materials.pdf

A comprehensive review on the progress of lead zirconate-based antiferroelectric materials

The experimental characteristics of polarization fatigue in thin-film, bulk ceramic, and single-crystalline ferroelectrics have been reviewed in detail. Various scenarios and models proposed for fatigue in ferroelectric materials during the past few decades have been discussed, together with our own model developed very recently [Phys. Rev. Lett. 97, 177601 (2006); Phys. Rev. B 75, 244104 (2007)]. Interpretations for the experimental data reviewed in this paper but untreated in our previous work [Phys. Rev. B 75, 244104 (2007)] as well as the methods of improving the fatigue endurance in ferroelectrics are given based on this model. Finally, the results on polarization fatigue in some special classes of ferroelectrics such as multiferroics (e.g., BiFeO3-based materials), ferroelectric polymers, and antiferroelectric thin films and ceramics are discussed and accounted for in light of our model.

Polarization fatigue in ferroelectric thin films and related materials

Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here, it is demonstrated that a giant electric energy density (154 J cm−3, three times the highest value of lead-based systems and five times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability, and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)0.9118La0.02Ba0.0582(Ti0.97Zr0.03)O3 (BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion, and the coexistence of the FE/AFE phases near the morphotropic phase boundary. The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology.

/pdf/giant-electric-energy-density-in-epitaxial-lead-free-thin-2hksy0hypz.pdf

Giant Electric Energy Density in Epitaxial Lead‐Free Thin Films with Coexistence of Ferroelectrics and Antiferroelectrics

The interface formation between Pb(Zr,Ti)O3 (PZT) and RuO2 and between PZT and In2O3 : Sn (ITO), respectively, was characterized using in situ x-ray photoelectron spectroscopy (XPS). No interface reaction was observed for the interfaces studied. The Fermi level position at the interface (Schottky barrier height) is strongly different for the two electrode materials. A Fermi level position of 1.0 ± 0.1 eV above the valence band maximum (VBM) is observed for the contact between PZT and the high work function oxide RuO2. For the contact between PZT and the low work function oxide ITO a Fermi level position of 2.1 ± 0.2 eV above the VBM is found.

/pdf/energy-band-alignment-between-pb-zr-ti-o3-and-high-and-low-1xsr2tbnle.pdf

Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides—from hole to electron injection

The interface formation between Pb(Zr,Ti)O3 and Pt, Cu and Ag was studied using in situ photoelectron spectroscopy. A strong interface reaction and a reduction of the substrate surface is observed for all three interfaces as evidenced by the appearance of metallic Pb species. Despite the different work function of the metals, nearly identical barrier heights are found with EF − EVB = 1.6 ± 0.1 eV, 1.8 ± 0.1 eV and 1.7 ± 0.1 eV of the as-prepared interfaces with Pt, Cu and Ag, respectively. The barrier heights are characterized by a strong Fermi level pinning, which is attributed to an oxygen deficient interface induced by the chemical reduction of Pb(Zr,Ti)O3 during metal deposition.

/pdf/reduction-induced-fermi-level-pinning-at-the-interfaces-532napwt47.pdf

Reduction-induced Fermi level pinning at the interfaces between Pb(Zr,Ti)O3 and Pt, Cu and Ag metal electrodes

By using highly conductive p-type La07Sr03MnO3 (LSMO) and n-type La007Sr093SnO3 (LSSO) as electrodes, all-oxide Pb(Zr052Ti048)O3 (PZT) capacitors, LSMO/PZT/LSMO, LSSO/PZT/LSSO, LSSO/PZT/LSMO, and LSMO/PZT/LSSO, have been grown epitaxially on (001)SrTiO3 substrates, and their structure, switching, fatigue, and optical properties were investigated Strikingly, contrary to the LSMO/PZT/LSMO capacitors, those having the n-type electrode show poor fatigue resistance especially at lower driving frequencies, which was further confirmed by using another n-type oxide electrode, SrTi09Sb01O3 The results suggest that with a depletion layer at the PZT/LSSO interface, charge accumulation and injection during switching may be responsible for the fatigue

Polarization switching and fatigue in Pb(Zr0.52Ti0.48)O3 films sandwiched by oxide electrodes with different carrier types

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Polarization switching and fatigue in Pb(Zr0.52Ti0.48)O3 films sandwiched by oxide electrodes with different carrier types