Fei Zhou
SanDisk
34 Papers
155 Citations
Fei Zhou is an academic researcher from SanDisk. The author has contributed to research in topics: Layer (electronics) & Stack (abstract data type). The author has an hindex of 8, co-authored 34 publications.
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Papers
Patent
Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof
Rahul Sharangpani,Raghuveer S. Makala,Senaka Kanakamedala,Fei Zhou,Somesh Peri,Masanori Tsutsumi,Keerti Shukla,Yusuke Ikawa,Kiyohiko Sakakibara,Eisuke Takii +9 more
- 29 Aug 2016
TL;DR: A memory opening can be formed through an alternating stack of insulating layers and sacrificial material layers provided over a substrate as discussed by the authors, where the annular etch stop material portions are provided at each level of the sacrificial materials layers around the memory opening.
24
Patent
Three-dimensional memory device with amorphous barrier layer and method of making thereof
Rahul Sharangpani,Raghuveer S. Makala,Keerti Shukla,Fei Zhou,Somesh Peri +4 more
- 12 Oct 2016
TL;DR: In this article, an electrically conductive, amorphous barrier layer can be formed prior to formation of a metal fill material layer to provide a diffusion barrier that reduces fluorine diffusion between the metal fill materials layer and memory films of memory stack structures.
21
Patent
Three dimensional memory device containing multilayer wordline barrier films and method of making thereof
Rahul Sharangpani,Fumitaka Amano,Raghuveer S. Makala,Fei Zhou,Keerti Shukla +4 more
- 10 Apr 2017
TL;DR: Memory stack structures are formed through an alternating stack of insulating layers and sacrificial material layers, and backside recesses are formed by removal of the sacrificial materials layers selective to the insulating layer and the memory stack structures.
16
Patent
Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof
Keerti Shukla,Raghuveer S. Makala,Rahul Sharangpani,Fei Zhou +3 more
- 23 Jan 2017
TL;DR: In this paper, a memory opening is formed through an alternating stack of sacrificial material layers and electrically conductive layers located over a substrate, and a memory stack structure including annular dielectric metal oxide structures in the memory opening was formed.
14
Patent
Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof
Rahul Sharangpani,Fumitaka Amano,Raghuveer S. Makala,Adarsh Rajashekhar,Fei Zhou +4 more
- 11 Oct 2017
TL;DR: In this paper, a three-dimensional memory device can be formed by forming a stack of alternating layers comprising insulating layers and sacrificial material layers and memory stack structures vertically extending therethrough.
14