Broadband convolutional processing using band-alignment-tunable heterostructures

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

http://absimage.aps.org/image/MAR14/MWS_MAR14-2013-005031.pdf

Black Phosphorus Field-effect Transistors

With the increasing demand for multispectral information acquisition, infrared multispectral imaging technology that is inexpensive and can be miniaturized and integrated into other devices has received extensive attention. However, the widespread usage of such photodetectors is still limited by the high cost of epitaxial semiconductors and complex cryogenic cooling systems. Here, we demonstrate a noncooled two-color infrared photodetector that can provide temporal-spatial coexisting spectral blackbody detection at both near-infrared and mid-infrared wavelengths. This photodetector consists of vertically stacked back-to-back diode structures. The two-color signals can be effectively separated to achieve ultralow crosstalk of ~0.05% by controlling the built-in electric field depending on the intermediate layer, which acts as an electron-collecting layer and hole-blocking barrier. The impressive performance of the two-color photodetector is verified by the specific detectivity (D*) of 6.4 × 109 cm Hz1/2 W-1 at 3.5 μm and room temperature, as well as the promising NIR/MWIR two-color infrared imaging and absolute temperature detection. 

/pdf/van-der-waals-two-color-infrared-photodetector-2weoj9w2.pdf

Van der Waals two-color infrared photodetector

/pdf/van-der-waals-two-color-infrared-photodetector-1sxkr1l4.pdf

Assembling different kinds of 2D nanosheets into heterostructures presents a promising way of designing novel artificial materials with new and improved functionalities by combining the unique properties of each component. In the past few years, black phosphorus nanosheets (BPNSs) have been recognized as a highly feasible 2D material with outstanding electronic properties, a tunable bandgap, and strong in-plane anisotropy, highlighting their suitability as a material for constructing heterostructures. In this study, recent progress in the construction of BPNS-based heterostructures ranging from 2D hybrid structures to 3D networks is discussed, emphasizing the different types of interactions (covalent or noncovalent) between individual layers. The preparation methods, optical and electronic properties, and various applications of these heterostructures-including electronic and optoelectronic devices, energy storage devices, photocatalysis and electrocatalysis, and biological applications-are discussed. Finally, critical challenges and prospective research aspects in BPNS-based heterostructures are also highlighted.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202005254

The Art of Constructing Black Phosphorus Nanosheet Based Heterostructures: From 2D to 3D

Semiconductor devices that rely on quantum tunnelling could be of use in logic, memory and radiofrequency applications. Tunnel devices that exhibit negative differential resistance typically follow an operating principle in which the tunnelling current contributes directly to the drive current. Here, we report a tunnelling field-effect transistor made from a black phosphorus/Al2O3/black phosphorus van der Waals heterostructure in which the tunnelling current is in the transverse direction with respect to the drive current. Through an electrostatic effect, this tunnelling current can induce a drastic change in the output current, leading to a tunable negative differential resistance with a peak-to-valley ratio of more than 100 at room temperature. Our device also exhibits abrupt switching, with a body factor (the relative change in gate voltage with respect to that of the surface potential) that is one-tenth of the Boltzmann limit for conventional transistors across a wide temperature range. A black phosphorus/Al2O3/black phosphorus heterostructure can be used to create a tunnel field-effect transistor in which the tunnelling current is in the transverse direction with respect to the drive current, leading to abrupt switching and a negative differential resistance with a peak-to-valley ratio of more than 100 at room temperature.

A transverse tunnelling field-effect transistor made from a van der Waals heterostructure

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A transverse tunnelling field-effect transistor made from a van der Waals heterostructure