Federico Corni
Free University of Bozen-Bolzano
146 Papers
751 Citations
Federico Corni is an academic researcher from Free University of Bozen-Bolzano. The author has contributed to research in topics: Silicon & Ion implantation. The author has an hindex of 17, co-authored 140 publications. Previous affiliations of Federico Corni include University of Modena and Reggio Emilia.
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Papers
Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon
Gf Cerofolini,Laura Meda,Roberto Balboni,Federico Corni,Stefano Frabboni,Giampiero Ottaviani,Rita Tonini,M. Anderle,Roberto Canteri +8 more
TL;DR: The displacement field in the crystal is found to depend on the direct radiation damage, the extended defects formed after ion implantation (revealed by transmission electron microscopy), and the implanted species.
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Helium-implanted silicon: A study of bubble precursors
Federico Corni,G Calzolari,Stefano Frabboni,Carlo Emanuele Nobili,Giampiero Ottaviani,Rita Tonini,Gf Cerofolini,D Leone,M Servidori,R. S. Brusa,G. P. Karwasz,N Tiengo,Antonio Zecca +12 more
TL;DR: The interaction of helium atoms with the radiation damage imparted to (100) silicon single crystal by He+ implantation at 5×1015 cm−2, 20 keV, and liquid-nitrogen temperature is investigated by means of various complementary techniques during and after thermal treatments as discussed by the authors.
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Helium in silicon: Thermal-desorption investigation of bubble precursors
Federico Corni,Carlo Emanuele Nobili,Giampiero Ottaviani,Rita Tonini,G Calzolari,Gf Cerofolini,G. Queirolo +6 more
TL;DR: In this article, a semiquantitative model based on the present knowledge about the Si:He system is proposed, that accounts for He filled nanoblisters formation through interstitial He clustering and precipitation.
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Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy
R. S. Brusa,M. Spagolla,Grzegorz P. Karwasz,Antonio Zecca,G. Ottaviani,Federico Corni,M. Bacchetta,E. Carollo +7 more
TL;DR: In this paper, the authors measured the 3γ annihilation of orthopositronium and the Doppler broadening of the positron annihilation line by implanting low energy positrons in low dielectric constant (low-k) SiOCH films.
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Nanovoid formation in helium-implanted single-crystal silicon studied by in situ techniques
TL;DR: In this paper, the structural evolution of a plate-like cluster of highly pressurized helium bubbles and ending in an empty nanovoid is performed conserving the total volume of vacancy-type extended defects forming each cluster.
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