Fawei Zheng
Beijing Institute of Technology
4 Papers
10 Citations
Fawei Zheng is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Pseudopotential & Wannier function. The author has an hindex of 3, co-authored 4 publications.
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Papers
The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets
TL;DR: In this article, the authors investigated the implication of the all-electron (AE) reconstruction on estimation of the DM-induced electronic transition event rates, and showed that the correction from the AE wavefunction in the core region is necessary for an accurate estimate of theDM-induced transition event rate in semiconductors.
The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets
TL;DR: In this article, the authors investigated the implication of the all-electron (AE) reconstruction on estimation of the DM-induced electronic transition event rates, and showed that the correction from the AE wavefunction in the core region is necessary for an accurate estimate of theDM-induced transition event rate in semiconductors.
Describing Migdal effects in diamond crystal with atom-centered localized Wannier functions
TL;DR: In this article, the authors extend the established strategy to describe the Migdal effect in isolated atoms to the case in semiconductors under the framework of the tight-binding approximation, since the localized aspects of electrons are respected in the form of the Wannier functions, while the extensive nature of electrons in solids is reflected in the hopping integrals.
Describing the Migdal effect with a bremsstrahlung-like process and many-body effects
TL;DR: In this paper, the effect of the bremsstrahlung photon mediating the Coulomb interaction between recoiled ion and the electron-hole pair is equivalent to that of the exchange of a single phonon.