A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

Thin-film transistor

A passivation method has been developed which reduces the degradation of AlGaN-GaN high electron mobility transistor (HEMT) electrical properties caused by extended dc bias or microwave power operation. The key aspect of this passivation technique is exposure to a low-power NH/sub 3/ plasma prior to SiN deposition. Devices fabricated with the NH/sub 3/ treatment prior to SiN passivation show minimal gate lag and current collapse after extended dc bias operation. In addition, the rate of degradation of the microwave power output while under continuous microwave operation is improved by at least 100 times as compared to SiN passivated HEMTs that were not treated with the NH/sub 3/ plasma.

Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

The NH/sub 3/-plasma passivation has been performed on polycrystalline silicon (poly-Si) thin-film transistors (TFT's), It is found that the TFT's after the NH/sub 3/-plasma passivation achieve better device performance, including the off-current below 0.1 pA//spl mu/m and the on/off current ratio higher than 10/sup 8/, and also better hot-carrier reliability than the H/sub 2/-plasma devices. Based on optical emission spectroscopy (OES) and secondary ion mass spectroscopy (SIMS) analysis, these improvements were attributed to not only the hydrogen passivation of the defect states, but also the nitrogen pile-up at SiO/sub 2//poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films. Furthermore, the gate-oxide leakage current significantly decreases and the oxide breakdown voltage slightly increases after applying NH/sub 3/-plasma treatment. This novel process is of potential use for the fabrication of TFT/LCD's and TFT/SRAM's.

https://ir.nctu.edu.tw:443/bitstream/11536/794/1/A1997VY96800010.pdf

Effects of NH/sub 3/ plasma passivation on N-channel polycrystalline silicon thin-film transistors

Silicon carbide structures are fabricated by fabricating a nitrided oxide layer on a layer of silicon carbide and annealing the nitrided oxide layer in an environment containing hydrogen. Such a fabrication of the nitrided oxide layer may be provided by forming the oxide layer in at least one of nitric oxide and nitrous oxide and/or annealing an oxide layer in at least one of nitric oxide and nitrous oxide. Alternatively, the nitrided oxide layer may be provided by fabricating an oxide layer and fabricating a nitride layer on the oxide layer so as to provide the nitrided oxide layer on which the nitride layer is fabricated. Furthermore, annealing the oxide layer may be provided as a separate step and/or substantially concurrently with another step such as fabricating the nitride layer or performing a contact anneal. The hydrogen environment may be pure hydrogen, hydrogen combined with other gases and/or result from a hydrogen precursor. Anneal temperatures of 400 °C or greater are preferred.

Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment

The novel gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with multiple nanowire channels (MNCs) have been, for the first time, fabricated using a simple process to demonstrate high-performance electrical characteristics and high immunity to short-channel effects (SCEs). The nanowire channel with high body-thickness-to-width ratio (TFin/WFin), which is approximately equal to one, was realized only with a sidewall-spacer formation. Moreover, the unique suspending MNCs were also achieved to build the GAA structure. The resultant GAA-MNC TFTs showed outstanding three-dimensional (3-D) gate controllability and excellent electrical characteristics, which revealed a high on/off current ratio ( > 108), a low threshold voltage, a steep subthreshold swing, a near-free drain-induced barrier lowering, as well as an excellent SCE suppression. Therefore, such high-performance GAA-MNC TFTs are very suitable for applications in system-on-panel and 3-D circuits.

https://ir.nctu.edu.tw:443/bitstream/11536/8517/1/000258096000021.pdf

Novel Gate-All-Around Poly-Si TFTs With Multiple Nanowire Channels

The NH/sub 3/ plasma passivation has been performed for the first time on the polycrystalline silicon (poly-Si) thin-film transistors (TFT's). It is found that the TFT's after the NH/sub 3/ plasma passivation achieve better device performances, including the off-current below 0.1 pA//spl mu/m and the on/off current ratio higher than 10/sup 8/, and also better hot-carrier reliability as well as thermal stability than the H/sub 2/-plasma devices. These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at SiO/sub 2//poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films. >

/pdf/the-effects-of-nh-3-plasma-passivation-on-polysilicon-thin-1636cs5n80.pdf

The effects of NH 3 plasma passivation on polysilicon thin-film transistors

Low-temperature (600 C) activation and recrystallization of the low-pressure chemical vapor deposition (LPCVD) amorphous-Si films B{sup +}- and BF{sub 2}{sup +}-implanted with different implantation dosages and projection ranges have been investigated. The boron dopant in the amorphous-Si layer can enhance the recrystallization, resulting in the shorter incubation time and smaller grain size then the undoped specimens. For the BF{sub 2}{sup +}-implanted specimens, the existence of fluorine atoms could postpone the grain nucleation, leading to the longer incubation time and slower nucleation rate for the heavily doped specimens than the undoped ones. For the BF{sub 2}{sup +}-implanted specimens, as the implantation peak reaches to the {alpha}-Si/SiO{sub 2} interface, the recoiled oxygen atoms from the oxide substrate would retard the grain nucleation and exhibit a significantly large grain size after a long time annealing. However, the recoiled oxygen atoms and the microdefects in the poly-Si layers would offset the improvement in hold mobility. Higher hold mobilities and lower trap state densities were also observed for the BF{sub 2}{sup +}-implanted specimens with respect to the B{sup +}-implanted ones. It is attributed to the passivation effect of fluorine atoms within the poly-Si layers.

https://ir.nctu.edu.tw:443/bitstream/11536/1713/1/A1995RZ32800073.pdf

Low-Temperature Activation and Recrystallization of B+- and BF+2-Implanted LPCVD Amorphous-Si Films

Based on spark plasma sintered (SPS) Nd-Fe-B magnets with PrCu sintering aid, hot deformed (HD) magnets are prepared through hot deformation technique. After that, using PrCu as the diffusion source, grain boundary diffusion (GBD) is implemented on HD magnet. Eventually, GBD magnet is subjected to hot deformation to regulate the distribution of RE-rich phase and increase <inline-formula> <tex-math notation="LaTeX">$c$ </tex-math></inline-formula>-axis orientation, referred to as the secondary deformation (SD). The results show that hot deformation processes have an important influence on magnetic properties and microstructure, among which the deformation condition of 700 °C/0.5 h is the most favorable to obtain optimal magnetic properties. Through GBD, the coercivity, as high as 2117 kA/m, can be obtained, increasing by 7.5% comparing with that of the initial SPS sample. Moreover, it is found that the SD can effectively optimize the distribution of RE-rich phase, and improve <inline-formula> <tex-math notation="LaTeX">$c$ </tex-math></inline-formula>-axis orientation of grains. Eventually, a good balance between coercivity and remanence is achieved. In addition, both GBD and SD can increase the thermal stability of HD magnets.

Microstructure Optimization and Magnetic Properties Enhancement of Hot Deformed Nd-Fe-B Magnets via Grain Boundary Diffusion and Secondary Hot Deformation

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Effects of NH/sub 3/ plasma passivation on N-channel polycrystalline silicon thin-film transistors

The effects of NH 3 plasma passivation on polysilicon thin-film transistors

Low-Temperature Activation and Recrystallization of B+- and BF+2-Implanted LPCVD Amorphous-Si Films

Microstructure Optimization and Magnetic Properties Enhancement of Hot Deformed Nd-Fe-B Magnets via Grain Boundary Diffusion and Secondary Hot Deformation