Fang Luo
Stony Brook University
164 Papers
639 Citations
Fang Luo is an academic researcher from Stony Brook University. The author has contributed to research in topics: Power module & EMI. The author has an hindex of 25, co-authored 131 publications. Previous affiliations of Fang Luo include Virginia Tech & Huazhong University of Science and Technology.
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Papers
Dual active bridge based battery charger for plug-in hybrid electric vehicle with charging current containing low frequency ripple
Lingxiao Xue,D. Diaz,Zhiyu Shen,Fang Luo,Paolo Mattavelli,Dushan Boroyevich +5 more
- 17 Mar 2013
TL;DR: In this paper, the operation of a battery charging system, which is comprised of one Full Bridge (FB) AC-DC stage and one Dual Active Bridge (DAB) DCDC stage, with charging current containing low frequency ripple at two times line frequency, designated as sinusoidal charging is investigated.
A review of SiC power module packaging: Layout, material system and integration
TL;DR: In this article, the authors provide a review of the state-of-the-art advanced module packaging technologies for SiC devices with the focus on module layout, packaging material system, and module integration trend, and link these packaging advancements to their impacts on the SiC device performances.
Leakage Current Reduction in a Single-Phase Bidirectional AC–DC Full-Bridge Inverter
TL;DR: In this article, a modified full-bridge inverter topology to reduce the dc-side leakage current as well as to mitigate the ac-side common-mode electromagnetic interference noise is presented.
157
Evaluation of the switching characteristics of a gallium-nitride transistor
Milisav Danilovic,Zheng Chen,Ruxi Wang,Fang Luo,Dushan Boroyevich,Paolo Mattavelli +5 more
- 01 Nov 2011
TL;DR: An inductive load tester circuit has been developed for switching characterization of a GaN transistor (EPC1010) and a paired silicon diode (SBR10U200P5).
151
Adaptive Multi-Level Active Gate Drivers for SiC Power Devices
Shuang Zhao,Audrey Dearien,Yuheng Wu,Chris Farnell,Arman Ur Rashid,Fang Luo,Homer Alan Mantooth +6 more
TL;DR: A novel three-level (3-L) AGD for SiC power mosfet trajectory control has a shorter turn-off delay compared to any existing methodology and a comprehensive datasheet-driven trajectory model for the online model-based optimization of the 3-L turn- off is introduced.
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